MRF8P20100HR3 Freescale Semiconductor, MRF8P20100HR3 Datasheet

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MRF8P20100HR3

Manufacturer Part Number
MRF8P20100HR3
Description
FET RF N-CH 2025MHZ 28V NI780H-4
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF8P20100HR3

Transistor Type
N-Channel
Frequency
2.03GHz
Gain
16dB
Voltage - Rated
65V
Current - Test
400mA
Voltage - Test
28V
Power - Output
20W
Package / Case
NI-780H-4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Noise Figure
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF8P20100HR3
Manufacturer:
Triquint
Quantity:
1 400
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
2025 MHz and GSM EDGE base station applications with frequencies from
1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular
base station modulation formats.
• Typical Doherty Single--Carrier W--CDMA Performance: V
1880 MHz
• Typical Doherty Single--Carrier W--CDMA Performance: V
GSM EDGE
• Typical GSM EDGE Performance: V
Features
• Production Tested in a Symmetrical Doherty Configuration
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Designed for CDMA base station applications with frequencies from 1880 to
I
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF.
I
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF.
P
and Common Source S--Parameters
DQA
DQA
out
Frequency
1805 MHz
1840 MHz
1880 MHz
= 42 Watts Avg.
= 400 mA, V
= 400 mA, V
Frequency
Frequency
2025 MHz
1880 MHz
1900 MHz
1920 MHz
(dB)
17.1
17.3
17.1
G
GSB
GSB
ps
= 1.3 Vdc, P
= 1.3 Vdc, P
43.8
42.4
41.7
(%)
η
(dB)
16.0
(dB)
16.2
16.1
15.8
G
G
D
ps
ps
@ 400 kHz
out
out
DD
(dBc)
--58.4
--60.0
--60.5
SR1
= 20 Watts Avg., IQ Magnitude
= 20 Watts Avg., IQ Magnitude
44.3
43.5
43.4
42.9
(%)
(%)
η
η
= 28 Volts, I
D
D
Output PAR
Output PAR
@ 600 kHz
(dB)
(dB)
DQA
7.8
7.6
7.6
7.6
(dBc)
--74.4
--75.5
--75.3
SR2
= I
DD
DD
DQB
= 28 Volts,
= 28 Volts,
= 330 mA,
ACPR
ACPR
(% rms)
(dBc)
(dBc)
--33.5
--30.8
--32.6
--34.6
EVM
3.0
2.6
2.4
Document Number: MRF8P20100H
RF
RF
CASE 465M- -01, STYLE 1
CASE 465H- -02, STYLE 1
MRF8P20100HR3 MRF8P20100HSR3
1805- -2025 MHz, 20 W AVG., 28 V
inA
MRF8P20100HSR3
inB
MRF8P20100HR3
MRF8P20100HR3
/V
MRF8P20100HSR3
/V
Figure 1. Pin Connections
GSA
GSB
LATERAL N- -CHANNEL
RF POWER MOSFETs
NI- -780- -4
NI- -780S- -4
SINGLE W- -CDMA
3
4
(Top View)
Rev. 0, 4/2010
1
2 RF
RF
outA
outB
/V
/V
DSA
DSB
1

Related parts for MRF8P20100HR3

MRF8P20100HR3 Summary of contents

Page 1

... Rev. 0, 4/2010 MRF8P20100HR3 MRF8P20100HSR3 1805- -2025 MHz AVG SINGLE W- -CDMA LATERAL N- -CHANNEL RF POWER MOSFETs CASE 465M- -01, STYLE 1 NI- -780- -4 MRF8P20100HR3 CASE 465H- -02, STYLE 1 NI- -780S- -4 MRF8P20100HSR3 inA GSA outA DSA inB GSB outB DSB (Top View) Figure 1. Pin Connections MRF8P20100HR3 MRF8P20100HSR3 1 ...

Page 2

... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 4. Each side of device measured separately. MRF8P20100HR3 MRF8P20100HSR3 2 = 25°C unless otherwise noted) Symbol I ...

Page 3

... Volts 330 mA, DD DQA DQB SR1 SR2 @ 400 kHz @ 600 kHz (dBc) (dBc) (% rms) --58.4 --74.4 --60.0 --75.5 --60.5 --75.3 MRF8P20100HR3 MRF8P20100HSR3 Unit dBc W W MHz MHz dB dB/°C dBm/°C = DQA ACPR (dBc) --30.8 --32.6 --34.6 EVM 3.0 2 ...

Page 4

... B1 GSA R2 C13 Z1 R1 C14 GSB Figure 2. MRF8P20100HR3(HSR3) Test Circuit Component Layout Table 5. MRF8P20100HR3(HSR3) Test Circuit Component Designations and Values Part B1 Ferrite Beads C1, C2, C3, C4, C5 Chip Capacitors C7, C8 0.3 pF Chip Capacitors C9, C10 1.2 pF Chip Capacitors C11, C12 10 pF Chip Capacitors C13, C14 4.7 μ ...

Page 5

... RF Device Data Freescale Semiconductor Single--ended λ λ Quadrature combined λ λ λ λ Doherty 4 4 λ λ λ λ Push--pull Possible Circuit Topologies Figure 3. MRF8P20100HR3 MRF8P20100HSR3 5 ...

Page 6

... Figure 5. Intermodulation Distortion Products 17 0 16.5 --1 16 --2 15.5 --3 15 --4 14.5 --5 14 --6 0 MRF8P20100HR3 MRF8P20100HSR3 6 TYPICAL CHARACTERISTICS η Vdc (Avg.), I DD out DQA V = 1.3 Vdc, Single--Carrier GSB W--CDMA, 3.84 MHz Channel G ps Bandwidth, Input Signal PAR = 9 0.01% Probability on CCDF ...

Page 7

... Figure 10. Single- -Carrier W- -CDMA Spectrum 60 0 η --10 40 --20 ACPR -- --40 10 --50 0 --60 100 0 --4 --8 --12 = 1.3 Vdc --16 --20 --24 2045 2080 3.84 MHz Channel BW +ACPR in 3.84 MHz --ACPR in 3.84 MHz Integrated BW Integrated BW --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 f, FREQUENCY (MHz) MRF8P20100HR3 MRF8P20100HSR3 7 ...

Page 8

... Figure 11. Series Equivalent Source and Load Impedance — Carrier Side Figure 12. Series Equivalent Source and Load Impedance — Peaking Side MRF8P20100HR3 MRF8P20100HSR3 Vdc 400 mA 1.3 Vdc Avg. DD DQA GSB out source load MHz Ω Ω 1880 3.23 -- j10.1 6.35 -- j5.32 1900 3 ...

Page 9

... Test Impedances per Compression Level f Z source (MHz) Ω 2010 P1dB 2.83 -- j12.46 2025 P1dB 3.43 -- j13.20 Figure 13. Pulsed CW Output Power versus Input Power @ 28 V Ideal Actual 2025 MHz P3dB dBm 48.8 48.9 Z load Ω 3.18 -- j6.16 3.16 -- j6.14 MRF8P20100HR3 MRF8P20100HSR3 9 ...

Page 10

... C13 B2 V GSB *C7 and C8 are mounted vertically. Figure 14. MRF8P20100HR3(HSR3) Test Circuit Component Layout — 1880 MHz Table 6. MRF8P20100HR3(HSR3) Test Circuit Component Designations and Values — 1880 MHz Part B1 Ferrite Beads C1, C2, C3, C4, C5 Chip Capacitors C7 Chip Capacitors C9, C10, C11 1.5 pF Chip Capacitors C12, C13 4.7 μ ...

Page 11

... FREQUENCY (MHz) Figure 17. Broadband Frequency Response 46 = 1.3 Vdc --28 --2 --5 --30 --2.1 --10 IRL --32 --2.2 --15 --34 --2.3 --20 --36 --2.4 --25 --38 --2.5 --30 2020 2040 60 0 η --10 ACPR -- --30 20 --40 10 --50 0 --60 100 0 --3 --6 --9 --12 --15 --18 2045 2080 MRF8P20100HR3 MRF8P20100HSR3 11 ...

Page 12

... Figure 18. Series Equivalent Source and Load Impedance — Carrier Side — 1880 MHz Figure 19. Series Equivalent Source and Load Impedance — Peaking Side — 1880 MHz MRF8P20100HR3 MRF8P20100HSR3 Vdc 400 mA 1.3 Vdc Avg. DD DQA GSB out source load MHz Ω Ω ...

Page 13

... V GSA GSB Figure 20. MRF8P20100HR3(HSR3) Test Circuit Component Layout — GSM EDGE Table 7. MRF8P20100HR3(HSR3) Test Circuit Component Designations and Values — GSM EDGE Part C1, C8 2.2 μ Chip Capacitors C2 Chip Capacitors C3, C6 2.7 pF Chip Capacitors C4, C5, C11, C20 15 pF Chip Capacitors C9, C22 10 μ ...

Page 14

... Vdc 330 mA DQA DQB 5 EDGE Modulation Avg. out Avg Avg 1780 1800 1820 1840 f, FREQUENCY (MHz) Figure 23. EVM versus Frequency MRF8P20100HR3 MRF8P20100HSR3 14 η Vdc (Avg out 330 mA DQA DQB EDGE Modulation IRL 1780 1800 1820 1840 1860 1880 f, FREQUENCY (MHz Watts Avg ...

Page 15

... FREQUENCY (MHz) Figure 27. Broadband Frequency Response = 330 mA η D 1880 MHz EVM 1840 MHz 1805 MHz 1880 MHz 1840 MHz 1805 MHz 10 100 P , OUTPUT POWER (WATTS) AVG. out versus Output Power 0 --6 --12 --18 --24 --30 --36 2605 2770 MRF8P20100HR3 MRF8P20100HSR3 300 15 ...

Page 16

... Figure 28. Series Equivalent Source and Load Impedance — Upper Side — GSM EDGE Figure 29. Series Equivalent Source and Load Impedance — Lower Side — GSM EDGE MRF8P20100HR3 MRF8P20100HSR3 Vdc 330 mA Avg. DD DQA DQB out source load MHz Ω Ω 1760 3.12 -- j7.74 4 ...

Page 17

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8P20100HR3 MRF8P20100HSR3 17 ...

Page 18

... MRF8P20100HR3 MRF8P20100HSR3 18 RF Device Data Freescale Semiconductor ...

Page 19

... RF Device Data Freescale Semiconductor MRF8P20100HR3 MRF8P20100HSR3 19 ...

Page 20

... MRF8P20100HR3 MRF8P20100HSR3 20 RF Device Data Freescale Semiconductor ...

Page 21

... For Software and Tools Part Number search at http://www.freescale.com, and select the “Part Number” link the Software & Tools tab on the part’s Product Summary page to download the respective tool. The following table summarizes revisions to this document. Revision Date 0 Apr. 2010 • Initial Release of Data Sheet RF Device Data Freescale Semiconductor REVISION HISTORY Description MRF8P20100HR3 MRF8P20100HSR3 21 ...

Page 22

... For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1--800--441--2447 or +1--303--675--2140 Fax: +1--303--675--2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF8P20100HR3 MRF8P20100HSR3 Document Number: MRF8P20100H Rev. 0, 4/2010 22 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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