MRF8P20100HR3 Freescale Semiconductor, MRF8P20100HR3 Datasheet - Page 7

• Manufacturer Part Number: MRF8P20100HR3
• Description: FET RF N-CH 2025MHZ 28V NI780H-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF8P20100HR3

• Transistor Type: N-Channel
• Frequency: 2.03GHz
• Gain: 16dB
• Voltage - Rated: 65V
• Current - Test: 400mA
• Voltage - Test: 28V
• Power - Output: 20W
• Package / Case: NI-780H-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

RF Device Data
Freescale Semiconductor
0.0001
0.001
0.01
100
0.1
10
1
0
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
Figure 9. CCDF W- -CDMA IQ Magnitude
Clipping, Single- -Carrier Test Signal
2
PEAK--TO--AVERAGE (dB)
4
Input Signal
18
17
16
15
14
13
12
18
12
15
6
Figure 7. Single- -Carrier W- -CDMA Power Gain, Drain
9
6
3
0
1800
1
2010 MHz
V
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth
G
DD
ps
Efficiency and ACPR versus Output Power
Figure 8. Broadband Frequency Response
= 28 Vdc, I
1835
8
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
TYPICAL CHARACTERISTICS
2017.5 MHz
1870
P
W- -CDMA TEST SIGNAL
DQA
out
10
, OUTPUT POWER (WATTS) AVG.
= 400 mA, V
1905
2025 MHz
2025 MHz
f, FREQUENCY (MHz)
Gain
IRL
12
1940
2017.5 MHz
GSB
10
= 1.3 Vdc
1975
2010 MHz
--100
--10
--20
--30
--40
--50
--60
--70
--80
--90
10
V
P
I
V
0
DQA
DD
in
GSB
--9
2010
= 0 dBm
Figure 10. Single- -Carrier W- -CDMA Spectrum
= 28 Vdc
= 400 mA
= 1.3 Vdc
--ACPR in 3.84 MHz
--7.2
Integrated BW
2045
ACPR
--5.4
η
D
2080
MRF8P20100HR3 MRF8P20100HSR3
100
--3.6
0
--4
--8
--12
--16
--20
--24
60
50
40
30
20
10
0
f, FREQUENCY (MHz)
--1.8
Channel BW
3.84 MHz
0
0
--10
--20
--30
--40
--50
--60
1.8
+ACPR in 3.84 MHz
3.6
Integrated BW
5.4
7.2
9
7