MRF8P20100HR3 Freescale Semiconductor, MRF8P20100HR3 Datasheet - Page 6

• Manufacturer Part Number: MRF8P20100HR3
• Description: FET RF N-CH 2025MHZ 28V NI780H-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF8P20100HR3

• Transistor Type: N-Channel
• Frequency: 2.03GHz
• Gain: 16dB
• Voltage - Rated: 65V
• Current - Test: 400mA
• Voltage - Test: 28V
• Power - Output: 20W
• Package / Case: NI-780H-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

6
MRF8P20100HR3 MRF8P20100HSR3
16.5
15.5
14.5
17
16
15
14
Figure 4. Output Peak- -to- -Average Ratio Compression (PARC)
16.7
16.4
16.1
15.8
15.5
15.2
14.9
14.6
14.3
--70
--20
--30
--40
--50
--60
17
14
--1
--2
--3
--4
--5
--6
0
1880
1
0
Broadband Performance @ P
Figure 5. Intermodulation Distortion Products
ACPR
V
I
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2017.5 MHz
DQA
ACPR
DD
Compression (PARC) versus Output Power
V
f = 2017.5 MHz, Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
Figure 6. Output Peak- -to- -Average Ratio
1900
= 28 Vdc, P
DD
= 400 mA, V
η
η
= 28 Vdc, I
D
TYPICAL CHARACTERISTICS
D
10
1920
--2 dB = 17.5 W
versus Two- -Tone Spacing
out
P
V
GSB
G
TWO--TONE SPACING (MHz)
out
DQA
DD
= 20 W (PEP)
ps
, OUTPUT POWER (WATTS)
1940
= 1.3 Vdc
= 28 Vdc, P
f, FREQUENCY (MHz)
PARC
= 400 mA, V
--1 dB = 9 W
20
1960
IM5--L
10
out
IM7--U
V
W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR =
9.9 dB @ 0.01% Probability
on CCDF
GSB
IM7--L
= 20 W (Avg.), I
GSB
30
1980
IRL
= 1.3 Vdc
out
IM5--U
= 1.3 Vdc, Single--Carrier
--3 dB = 26 W
IM3--L
= 20 Watts Avg.
IM3--U
2000
DQA
40
= 400 mA
2020
PARC
G
ps
2040
100
50
46
44
42
40
38
--25
--27
--29
--31
--33
--35
60
50
40
30
20
10
0
--25
--30
--35
--40
--45
--50
--55
--5
--10
--15
--20
--25
--30
Freescale Semiconductor
RF Device Data
--1.5
--1.7
--1.9
--2.1
--2.3
--2.5