DS90UR905QSQ/NOPB National Semiconductor, DS90UR905QSQ/NOPB Datasheet - Page 10

• Manufacturer Part Number: DS90UR905QSQ/NOPB
• Description: IC SER/DESERIAL 24BIT 48LLP
• Manufacturer: National Semiconductor
• Series: PowerWise®r

Specifications of DS90UR905QSQ/NOPB

• Function: Serializer
• Data Rate: 1.82Gbps
• Input Type: Parallel
• Output Type: Serial
• Number Of Inputs: 24
• Number Of Outputs: 1
• Voltage - Supply: 1.71 V ~ 1.89 V
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: 48-WFQFN, Exposed Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage – V
Supply Voltage – V
LVCMOS I/O Voltage
Receiver Input Voltage
Driver Output Voltage
Junction Temperature
Storage Temperature
48L LLP Package
Maximum Power Dissipation
Capacity at 25°C
θ
θ
60L LLP Package
Maximum Power Dissipation
Capacity at 25°C
θ
θ
ESD Rating (HBM)
ESD Rating (CDM)
ESD Rating (MM)
ESD Rating (ISO10605), R
2kΩ, C
Air Discharge (D
Contact Discharge (D
D
Air Discharge (R
Contact Discharge (R
ESD Rating (ISO10605), R
Air Discharge (D
Contact Discharge (D
D
Air Discharge (R
Contact Discharge (R
ESD Rating (IEC 61000-4-2), R
Air Discharge (D
Contact Discharge (D
D
Air Discharge (R
Contact Discharge (R
For soldering specifications:
OUT−
OUT−
OUT−
Derate above 25°C
Derate above 25C
see product folder at www.national.com and
www.national.com/ms/MS/MS-SOLDERING.pdf
JA
JC
JA
JC
(based on 9 thermal vias)
(based on 9 thermal vias)
)
)
)
(based on 9 thermal vias)
(based on 9 thermal vias)
S
= 330pF or R
OUT+
IN+
OUT+
IN+
OUT+
IN+
DDn
DDIO
, R
, R
, R
, D
, D
, D
OUT+
IN+
OUT+
IN+
OUT+
IN+
D
IN−
IN−
IN−
(1.8V)
= 330Ω, C
OUT−
OUT−
OUT−
, R
, R
, R
)
)
)
,
,
,
D
IN−
D
IN−
IN−
)
)
)
= 2kΩ, C
= 330Ω, C
)
)
)
D
−0.3V to +(VDDIO + 0.3V)
= 330Ω, C
S
= 150pF
−0.3V to (VDD + 0.3V)
−0.3V to (VDD + 0.3V)
S
S
= 150pF or R
= 330pF
−65°C to +150°C
S
−0.3V to +2.5V
−0.3V to +4.0V
= 150pF
1/θ
1/θ
(Note
JA
JA
27.1 °C/W
24.6 °C/W
4.5 °C/W
2.8 °C/W
≥
≥
≥
≥
≥
≥
≥
≥
≥
≥
≥
mW / °C
mW / °C
215mW
470mW
+150°C
≥
≥
≥
≥
±250 V
±30 kV
±10 kV
±30 kV
±10 kV
±15 kV
±10 kV
±15 kV
±10 kV
±25 kV
±25 kV
D
1)
±8 kV
±1 kV
±8 kV
±8 kV
=
10
Supply Voltage (V
LVCMOS Supply
Voltage (V
OR
LVCMOS Supply
Voltage (V
Operating Free Air
PCLK Clock Frequency
Supply Noise
Recommended Operating
Conditions
Temperature (T
DDIO
DDIO
(Note
)
)
DDn
10)
A
)
)
1.71
1.71
Min
−40
3.0
5
Nom
+25
1.8
1.8
3.3
+105
Max
1.89
1.89
3.6
65
50
mV
Units
MHz
°C
V
V
V
P-P