RPM-012PBT87 Rohm Semiconductor, RPM-012PBT87 Datasheet - Page 2

• Manufacturer Part Number: RPM-012PBT87
• Description: Photodetector Transistors SMD IR RECEIVER SIDE VIEW
• Manufacturer: Rohm Semiconductor
• Type: Chipr

Specifications of RPM-012PBT87

• Package / Case: SMD
• Maximum Power Dissipation: 75 mW
• Maximum Dark Current: 500 nA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 30 C
• Transistor Polarity: NPN
• Wavelength Typ: 800nm
• Power Consumption: 75mW
• Viewing Angle: 12°
• Transistor Case Style: Side Looking
• No. Of Pins: 2
• Operating Temperature Range: -30°C To +85°C
• Rise: RoHS Compliant
• Fall Time Tf: 10µs
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical and optical characteristic curves
○
RPM-012PB
c
www.rohm.com
10000
1000
0.01
100
100
90
80
70
60
50
40
30
20
10
2010 ROHM Co., Ltd. All rights reserved.
0.1
0
10
Fig.4 Dark current−Ambient temperature
4
3
2
1
0
−50
−90
1
0
Fig.1 Collector current−llluminance
ANGULAR DISPLACEMENT : θ
Fig.7 Directional pattern(1)
AMBIENT TEMPERATURE : Ta
−60
−25
250
ILLUMINANCE : E
−30
0
500
25
0
750
30
50
(Lx)
V
V
V
CE
CE
CE
−
1000
V
(deg)
=10V
=20V
=30V
60
0
CE
75
(°C)
=5V
+
1250
100
90
100
100
4
3
2
1
0
80
60
40
20
Fig.5 Spectral sensitivity characteristics
90
80
70
60
50
40
30
20
10
400
0
0
0
−90
COLLECTOR-EMITTER VOLTAGE : V
500 600 700
ANGULAR DISPLACEMENT : θ
Fig.2 Output characteristics
OPTICAL WAVELENGTH : λ
Fig.7 Directional pattern(1)
−60
10
−30
2/2
800 900 1000 1100 1200
0
20
30
E=1000Lx
E=500Lx
E=250Lx
E=750Lx
−
(nm)
(deg)
60
30
0
CE
+
(V)
90
1000
100
Fig.3 Relative output−Ambient temperature
10
1000
−50
100
1
10
1
0.1
Fig.6 Response time-Collector current
AMBIENT TEMPERATURE : Ta
−25
COLLECTOR CURRENT : I
0
1
2010.06 - Rev.A
25
Data Sheet
50
10
R
R
R
L
L
=100Ω
L
=500Ω
=1kΩ
C
75
(°C)
Ta=25 C
V
(mA)
CC
=10V
100
100