TCET1100G Vishay, TCET1100G Datasheet - Page 2

• Manufacturer Part Number: TCET1100G
• Description: Transistor Output Optocouplers Phototransistor Out Single CTR 50-600%
• Manufacturer: Vishay

Specifications of TCET1100G

• Isolation Voltage: 5000 Vrms
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor
• Output Type: DC
• Configuration: 1
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 300 mV
• Current Transfer Ratio: 600 %
• Maximum Forward Diode Voltage: 1.6 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 265 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: PDIP-4
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 50mA
• Output Voltage: 70V
• Opto Case Style: DIP
• No. Of Pins: 4
• Mounting Type: Through Hole
• Approval Bodies: VDE, CSA, BSI EN
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TCET1100/TCET1100G
Vishay Semiconductors
Order Information
G = Leadform 10.16 mm; G is not marked on the body
Absolute Maximum Ratings
T
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Output
www.vishay.com
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TCET1100
TCET1101
TCET1102
TCET1103
TCET1104
TCET1105
TCET1106
TCET1107
TCET1108
TCET1109
TCET1100G
TCET1101G
TCET1102G
TCET1103G
TCET1104G
TCET1105G
TCET1106G
TCET1107G
TCET1108G
TCET1109G
Reverse voltage
Forward current
Forward surge current
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
amb
= 25 °C, unless otherwise specified
Part
Parameter
Parameter
CTR 50 - 600 %, DIP-4
CTR 40 - 80 %, DIP-4
CTR 63 - 125 %, DIP-4
CTR 100 - 200 %, DIP-4
CTR 160 - 320 %, DIP-4
CTR 50 - 150 %, DIP-4
CTR 100 - 300 %, DIP-4
CTR 80 - 160 %, DIP-4
CTR 130 - 260 %, DIP-4
CTR 200 - 400 %, DIP-4
CTR 50 - 600 %, DIP-4
CTR 40 - 80 %, DIP-4
CTR 63 - 125 %, DIP-4
CTR 100 - 200 %, DIP-4
CTR 160 - 320 %, DIP-4
CTR 50 - 150 %, DIP-4
CTR 100 - 300 %, DIP-4
CTR 80 - 160 %, DIP-4
CTR 130 - 260 %, DIP-4
CTR 200 - 400 %, DIP-4
t
t
p
p
/T = 0.5, t
≤ 10 μs
Remarks
Test condition
Test condition
p
≤ 10 ms
Symbol
Symbol
V
V
I
I
FSM
V
CEO
ECO
CM
I
I
F
C
R
Value
Value
100
1.5
60
70
50
6
7
Document Number 83503
Rev. 2.2, 05-Sep-06
Unit
Unit
mA
mA
mA
V
A
V
V