TCET1100G Vishay, TCET1100G Datasheet - Page 5

• Manufacturer Part Number: TCET1100G
• Description: Transistor Output Optocouplers Phototransistor Out Single CTR 50-600%
• Manufacturer: Vishay

Specifications of TCET1100G

• Isolation Voltage: 5000 Vrms
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor
• Output Type: DC
• Configuration: 1
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 300 mV
• Current Transfer Ratio: 600 %
• Maximum Forward Diode Voltage: 1.6 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 265 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: PDIP-4
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 50mA
• Output Voltage: 70V
• Opto Case Style: DIP
• No. Of Pins: 4
• Mounting Type: Through Hole
• Approval Bodies: VDE, CSA, BSI EN
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Maximum Safety Ratings
(according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1.
Input
Output
Coupler
Insulation Rated Parameters
Document Number 83503
Rev. 2.2, 05-Sep-06
This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Forward current
Power dissipation
Rated impulse voltage
Safety temperature
Partial discharge test voltage -
Routine test
Partial discharge test voltage -
Lot test (sample test)
Insulation resistance
94 9182
Parameter
Parameter
Parameter
Parameter
300
250
200
150
100
50
0
0
Figure 1. Derating diagram
25
T
si
- Safety Temperature (°C)
IR-Diode
Isi (mA)
50
Phototransistor
Psi (mW)
75
100 %, t
t
(see figure 2)
V
V
V
(construction test only)
Tr
IO
IO
IO
= 60 s, t
= 500 V
= 500 V, T
= 500 V, T
100
test
Test condition
Test condition
Test condition
Test condition
test
125
= 1 s
= 10 s,
amb
amb
150
= 100 °C
= 150 °C
Figure 2. Test pulse diagram for sample test according to DIN EN
Symbol
Symbol
Symbol
Symbol
V
V
P
V
V
R
R
R
IOTM
T
IOTM
I
diss
F
pd
pd
IO
IO
IO
si
TCET1100/TCET1100G
13930
V
V
V
IOWM
IOTM
IORM
60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747
V
Pd
0
t
1
10
10
Min
Min
Min
Min
10
1.6
1.3
8
12
11
9
t
t
t
1
3
stres
t
test
, t
, t
2
4
t
Tr
Vishay Semiconductors
= 1 to 10 s
= 1 s
= 10 s
= 12 s
Typ.
Typ.
Typ.
Typ.
= 60 s
Max
Max
Max
Max
130
265
150
8
t
2
t
3
www.vishay.com
t
t
stres
test
t
t
4
Unit
Unit
mW
Unit
Unit
mA
kV
°C
kV
kV
kV
Ω
Ω
Ω
5