TLP421(GR,J) Toshiba, TLP421(GR,J) Datasheet - Page 3

• Manufacturer Part Number: TLP421(GR,J)
• Description: Transistor Output Optocouplers PHOTO-TRANS W/IR 80V 5000 Vrms
• Manufacturer: Toshiba

Specifications of TLP421(GR,J)

• Forward Current: 10 mA
• Maximum Input Diode Current: 10 mA
• Maximum Reverse Diode Voltage: 5 V
• Output Device: Phototransistor
• Configuration: 1 Channel
• Maximum Collector Emitter Voltage: 80 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Isolation Voltage: 5000 Vrms
• Current Transfer Ratio: 100 % to 300 %
• Maximum Forward Diode Voltage: 1.3 V
• Minimum Forward Diode Voltage: 1 V
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: DIP-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Absolute Maximum Ratings
Recommended Operating Conditions
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
(Note 2): 100μs pulse, 100Hz frequency
(Note 3): AC, 1 min., R.H.≤ 60%. Apply voltage to LED pin and detector pin together.
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
Operating temperature range
Storage temperature range
Lead soldering temperature (10s)
Total package power dissipation
Total package power dissipation derating
(Ta ≥ 25°C)
Isolation voltage
Supply voltage
Forward current
Collector current
Operating temperature
Forward current
Forward current derating(Ta ≥ 39°C)
Pulse forward current
Power dissipation
Power dissipation derating
Reverse voltage
Junction temperature
Collector−emitter voltage
Emitter−collector voltage
Collector current
Power dissipation(single circuit)
Power dissipation derating
(Ta ≥ 25°C)(single circuit)
Junction temperature
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Characteristic
Characteristic
(Ta = 25°C)
(Note 3)
(Note 2)
Symbol
V
T
I
I
CC
opr
C
F
ΔP
ΔP
ΔP
ΔI
Symbol
V
V
T
BV
T
T
F
I
P
V
P
D
CEO
ECO
C
P
T
I
I
FP
T
T
opr
3
stg
sol
C
F
/ °C
D
R
C
T
j
j
/ °C
/ °C
/ °C
S
−25
Min
―
―
―
Typ.
16
―
−55~100
−55~125
5
1
Rating
5000
−0.7
−1.0
−1.5
−2.5
100
125
150
125
260
250
60
80
50
1
5
7
Max
24
25
10
85
mW / °C
mW / °C
mW / °C
mA / °C
Unit
mA
mA
V
°C
mW
mW
mW
mA
mA
V
°C
°C
°C
°C
°C
rms
Unit
A
V
V
V
2007-10-01
TLP421