BGA 428 H6327 Infineon Technologies, BGA 428 H6327 Datasheet - Page 5

RF Amplifier RF SILICON MMIC

BGA 428 H6327

Manufacturer Part Number
BGA 428 H6327
Description
RF Amplifier RF SILICON MMIC
Manufacturer
Infineon Technologies
Type
Silicon Germanium MMICr
Datasheet

Specifications of BGA 428 H6327

Mounting Style
SMD/SMT
Operating Frequency
1.8 GHz
P1db
- 19 dBm
Noise Figure
1.4 dB
Operating Supply Voltage
4 V
Supply Current
8.2 mA
Maximum Power Dissipation
50 mW
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Package / Case
SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BGA428H6327XT
Maximum Ratings
Table 1
Parameter
Device voltage
Voltage at pin Out
Voltage at pin GS
Current into pin In
Total device current
Input power
Total power dissipation,
Junction temperature
Operating temperature range
Storage temperature range
1)
2) Valid for:
3)
Note: All Voltages refer to GND-Node
Thermal resistance
Table 2
Parameter
Junction - soldering point
1) For calculation of
Data Sheet
I
a)
b)
T
tot
S
Z
Z
is measured on the ground lead at the soldering point
= Current into Out + Current into
L
L
= 50 ,
= 50 ,
2)
Maximum ratings
Thermal resistance
Z
Z
S
S
= 50
= 50
R
1)
thJA
please refer to Application Note Thermal Resistance
T
1)
V
V
S
CC
CC
< 125 °C
= 2.7 V,
= 0.0 V,
V
3)
V
V
CC
out
out
Symbol
V
V
V
I
I
P
P
T
T
T
Symbol
R
= 2.7 V,
= 0.0 V,
in
tot
J
OP
STG
CC
out
GS
in
tot
thJS
V
V
GS
GS
= 0.0 V,
= 2.7 V,
5
GND
GND
Silicon Germanium Broadband MMIC Amplifier
Limit Value
4
4
3.5
0.5
12
8
50
150
-40... 85
-65... 150
Value
220
= 0.0 V
= 0.0 V
Unit
V
V
V
mA
mA
dBm
mW
°C
°C
°C
Unit
K/W
Rev. 2.2, 2007-11-06
BGA428

Related parts for BGA 428 H6327