BGA 428 H6327 Infineon Technologies, BGA 428 H6327 Datasheet - Page 6

• Manufacturer Part Number: BGA 428 H6327
• Description: RF Amplifier RF SILICON MMIC
• Manufacturer: Infineon Technologies
• Type: Silicon Germanium MMICr

Specifications of BGA 428 H6327

• Mounting Style: SMD/SMT
• Operating Frequency: 1.8 GHz
• P1db: - 19 dBm
• Noise Figure: 1.4 dB
• Operating Supply Voltage: 4 V
• Supply Current: 8.2 mA
• Maximum Power Dissipation: 50 mW
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Package / Case: SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BGA428H6327XT

2
2.1
Table 3
Parameter
Maximum available power gain
Noise figure (
Input power at 1 dB gain compression
Input third order intercept point
Total device current
Insertion loss in gain-step-mode
Figure 2
Data Sheet
Electrical Characteristics
Electrical characteristics at
Figure
Electrical Characteristics
Test Circuit for Electrical Characteristics and S-Parameter
Z
S
= 50
2),
In
V
CC
V
CTRL
= 2.7 V, Frequency = 1.8 GHz, unless otherwise specified
R
Bias-T
CTRL
=3k
Symbol
G
NF
P
IIP
I
L
tot
GS
-1dB
MA
3
GS
IN
T
Top View
A
GND
Min.
= 25 °C (measured in test circuit specified in
OUT
V
6
CC
47pF
Typ.
20
1.4
-19
9
8.2
13.5
Values
180pF
Bias-T
BGA428_Test_Circuit.vsd
100nF
Max.
Out
2.7V
Electrical Characteristics
Unit
dB
dB
dBm
dBm
mA
dB
Rev. 2.2, 2007-11-06
Note /
Test Condition
V
V
R
CC
CTRL
CRRL
= 0.0 V,
= 2.7 V,
= 3 k
BGA428