2N3819-E3 Vishay, 2N3819-E3 Datasheet
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2N3819-E3
Specifications of 2N3819-E3
Related parts for 2N3819-E3
2N3819-E3 Summary of contents
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... D High ac/dc Switch Off-Isolation D High Gain 100 mA V The 2N3819 is a low-cost, all-purpose JFET which offers good performance at mid-to-high frequencies. It features low noise and leakage and guarantees high gain at 100 MHz. Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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... Vishay Siliconix _ Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage b Saturation Drain Current Gate Reverse Current c Gate Operating Current Drain Cutoff Current Drain-Source On-Resistance Gate-Source Voltage Gate-Source Forward Voltage Dynamic c Common-Source Forward Transconductance c Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance ...
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... Document Number: 70238 S–04028—Rev. D ,04-Jun- GSS 125_C 25_C GSS –0.2 V –0.4 V –0.6 V –0.8 V –1.0 V –1.2 V –1 –1.6 –2 2N3819 Vishay Siliconix Common-Source Forward Transconductance vs. Drain Current – (off kHz –55_C A 6 25_C 4 125_C – Drain Current (mA) D Output Characteristics ...
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... Vishay Siliconix Transconductance vs. Gate-Source Voltage –2 V GS(off –55_C A 6 25_C 4 125_C –0.4 –0.8 –1.2 V – Gate-Source Voltage (V) GS On-Resistance vs. Drain Current 300 T = –55_C A 240 V = –2 V GS(off) 180 120 – Drain Current (mA) D Common-Source Input Capacitance vs. Gate-Source Voltage MHz –4 – ...
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... V GS(off DSS 0 10 100 – Frequency (Hz) Document Number: 70238 S–04028—Rev. D ,04-Jun- 500 1000 –b rs –g rs 500 1000 100 k 2N3819 Vishay Siliconix Forward Admittance 100 T = 25_C Common Source – 0.1 100 200 500 f – Frequency (MHz) Output Admittance 25_C Common Source ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...