2N3819-E3 Vishay, 2N3819-E3 Datasheet - Page 2

• Manufacturer Part Number: 2N3819-E3
• Description: JFET 25V 10mA
• Manufacturer: Vishay

Specifications of 2N3819-E3

• Configuration: Single
• Transistor Polarity: N-Channel
• Package / Case: TO-226AA
• Gate-source Breakdown Voltage: - 25 V
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: - 25 V
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Breakdown Voltage Vbr: -35V
• Gate-source Cutoff Voltage Vgs(off) Max: -8V
• Power Dissipation Pd: 350mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

2N3819
Vishay Siliconix
Notes
a.
b.
c.
www.vishay.com
7-2
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
Drain-Source On-Resistance
Gate-Source Voltage
Gate-Source Forward Voltage
Dynamic
Common-Source Forward Transconductance
Common-Source Output Conductance
Common-Source Input Capacitance
Common-Source Reverse Transfer Capacitance
Equivalent Input Noise Voltage
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW v300 ms, duty cycle v2%.
This parameter not registered with JEDEC.
20
16
12
8
4
0
0
Drain Current and Transconductance
g
V
vs. Gate-Source Cutoff Voltage
fs
GS(off)
–2
Parameter
c
b
– Gate-Source Cutoff Voltage (V)
I
g
f = 1 kHz
DSS
fs
@ V
@ V
–4
I
c
DSS
DS
DS
= 15 V, V
= 15 V, V
c
–6
c
GS
_
GS
= 0 V
= 0 V
–8
Symbol
V
V
–10
r
V
(BR)GSS
I
DS(on)
GS(off)
I
I
D(off)
V
C
C
DSS
GSS
GS(F)
g
g
I
e
GS
G
os
iss
rss
fs
n
_
10
8
6
4
2
0
V
V
V
DS
DS
V
V
DS
GS
V
V
= 15 V, V
= 10 V, V
V
V
I
V
V
Test Conditions
V
I
DS
DS
= 15 V
G
GS
G
DS
DS
DG
= 0 V
= 0 V
GS
= –1 mA , V
= 1 mA , V
= 15 V, I
= 10 V, V
= –15 V, V
= 15 V, V
= 15 V, I
= 10 V, I
= 0 V, I
500
400
300
200
100
0
GS
GS
0
= 0 V, f = 100 Hz
= 0 V, f = 1 MHz
D
D
D
GS
DS
D
DS
GS
On-Resistance and Output Conductance
= 200 mA
DS
= 1 mA
= 1 mA
= 2 nA
= –8 V
= 0 V
= 0 V
= 0 V
= 0 V
f = 100 MHz
T
r
V
DS
A
vs. Gate-Source Cutoff Voltage
f = 1 kHz
f = 1 kHz
GS(off)
–2
= 100_C
– Gate-Source Cutoff Voltage (V)
r
g
f = 1 kHz
DS
os
@ I
@ V
–4
D =
Min
–0.5
DS
–25
1.6
2
2
1 mA, V
= 10 V, V
g
–6
os
Limits
–0.002
–0.002
Typ
S–04028—Rev. D ,04-Jun-01
–2.5
GS
–35
–20
150
0.7
5.5
5.5
2.2
0.7
–3
10
25
Document Number: 70238
2
6
GS
= 0 V
a
= 0 V
–8
Max
–7.5
6.5
20
–2
–2
50
–8
8
4
–10
Unit
mA
mS
nV
nA
mA
pA
mS
100
80
60
40
20
0
pF
V
W
V
Hz
NH