2N3819-E3 Vishay, 2N3819-E3 Datasheet - Page 5

• Manufacturer Part Number: 2N3819-E3
• Description: JFET 25V 10mA
• Manufacturer: Vishay

Specifications of 2N3819-E3

• Configuration: Single
• Transistor Polarity: N-Channel
• Package / Case: TO-226AA
• Gate-source Breakdown Voltage: - 25 V
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: - 25 V
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Breakdown Voltage Vbr: -35V
• Gate-source Cutoff Voltage Vgs(off) Max: -8V
• Power Dissipation Pd: 350mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 70238
S–04028—Rev. D ,04-Jun-01
0.01
100
0.1
0.1
20
16
12
10
10
8
4
0
1
1
100
100
10
Equivalent Input Noise Voltage vs. Frequency
T
V
V
Common Source
T
V
V
Common Source
A
A
V
DS
GS
DS
GS
GS(off)
= 25_C
= 25_C
I
= 15 V
= 15 V
= 0 V
= 0 V
D
= I
= –3 V
DSS
100
200
200
Reverse Admittance
Input Admittance
f – Frequency (MHz)
f – Frequency (MHz)
f – Frequency (Hz)
1 k
I
D
500
500
= 5 mA
V
–b
10 k
DS
rs
b
= 10 V
is
–g
g
is
rs
1000
1000
100 k
_
0.01
100
0.1
0.1
10
10
20
16
12
1
1
8
4
0
100
100
0.1
T
V
V
Common Source
T
V
V
Common Source
A
DS
GS
V
A
Output Conductance vs. Drain Current
DS
GS
= 25_C
GS(off)
= 25_C
= 15 V
= 0 V
= 15 V
= 0 V
g
= –3 V
fs
T
125_C
A
Forward Admittance
200
200
= –55_C
Output Admittance
I
D
f – Frequency (MHz)
f – Frequency (MHz)
– Drain Current (mA)
Vishay Siliconix
1
b
os
25_C
–b
500
500
V
f = 1 kHz
is
DS
2N3819
g
www.vishay.com
os
= 10 V
1000
1000
10
7-5