TN2640LG-G Supertex, TN2640LG-G Datasheet
TN2640LG-G
Manufacturer Part Number
TN2640LG-G
Description
MOSFET Small Signal 400V 5Ohm
Manufacturer
Supertex
Datasheet
1.TN2640LG-G.pdf
(2 pages)
Specifications of TN2640LG-G
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5 Ohm @ 10 V
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.26 A
Power Dissipation
1300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Applications
! DC-DC converters
! Solid state relays
! Ultrasound pulsers
! Telecom switches
! Photo voltaic drivers
! Analog switches
Summary
Product
Sheet
12/21/01
Features:
Low threshold — 2.0V max.
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown compared
to bipolar transistors
Low input and output leakage
Addition of D-Pak option
Product Overview:
TN2640K4 N-Channel Enhancement-Mode DMOS FET. The device features fast switching
speeds, low parasitic capacitances and a low gate threshold for ease of driving the FET. It’s D-
Pak package gives designers the flexibility to use the device in a wide range of power switching
and amplifying applications. It has a high breakdown voltage (400V), a low on-resistance (5.0W)
and a low input capacitance (225pF) for fast switching applications. Adding these features into
the D-Pak package increases the power dissipation capability to 2.5W in small footprints
utilizing surface mount technology. It’s low input and output leakage feature improves standby
power dissipation while minimizing signal attenuation.
TN2640 N-Channel
Enhancement-Mode DMOS FET
Low Threshold DMOS Technology
Switching Waveforms and Test Circuit
Benefits:
Can be operated directly from logic level input signals.
Eliminates the need for a level translator.
Eliminates the need to supply DC current into the gate.
Improves overall efficiency.
Maximizes switching speed to help improve overall effi-
ciency.
Improves overall efficiency
Maximizes efficiency, minimizes power dissipation.
Improves overall reliability.
Improves measurement accuracy. Minimizes signal
attenuation.
Increases the power dissipation capability for surface
mount technology to 2.5W.
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TN2640LG-G Summary of contents
Page 1
TN2640 N-Channel Product Summary Enhancement-Mode DMOS FET Sheet Low Threshold DMOS Technology Applications ! DC-DC converters ! Solid state relays ! Ultrasound pulsers ! Telecom switches ! Photo voltaic drivers ! Analog switches Product Overview: TN2640K4 N-Channel Enhancement-Mode DMOS FET. ...
Page 2
... TN2640 N-Channel Enhancement-Mode DMOS FET Electrical Specifications BV Device DSS BV DGS TN2640 400V Availability Part Number Package TN2640N3 TO-92 TN2640LG SO-8 TN2640K4 D-Pak Price List Part Number TN2640K4 Package Information D-Pak Product Contact If you have any questions regarding the TN2640 or samples, contact Supertex Applications at: Supertex Sales ...