VN2106N3-G Supertex, VN2106N3-G Datasheet - Page 2

• Manufacturer Part Number: VN2106N3-G
• Description: MOSFET Small Signal 60V 4Ohm
• Manufacturer: Supertex

Specifications of VN2106N3-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.3 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:
Electrical Characteristics
Switching Waveforms and Test Circuit
Notes:
ΔR
Thermal Characteristics
ΔV
R
BV
V
†
Sym
t
I
C
1.
2.
C
t
C
d(OFF)
I
I
G
V
D(ON)
DS(ON)
d(ON)
Package
GS(th)
GSS
DSS
DS(ON)
t
OSS
GS(th)
RSS
t
t
ISS
SD
rr
FS
r
f
TO-92
DSS
I
D
All D.C. parameters 100% tested at 25
All A.C. parameters sample tested.
(continuous) is limited by max rated T
Parameter
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
Gate body leakage current
Zero gate voltage drain current
On-state drain current
Static drain-to-source on-state resistance
Change in R
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
OUTPUT
INPUT
V
10V
0V
DD
0V
(continuous)
10%
(mA)
300
GS(th)
DS(ON)
I
D
with temperature
t
d(ON)
with temperature
10%
†
t
(ON)
90%
●
t
r
1235 Bordeaux Drive, Sunnyvale, CA 94089
(pulsed)
j
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
.
1.0
(T
(A)
I
D
A
= 25°C unless otherwise specified)
90%
t
d(OFF)
t
(OFF)
Power Dissipation
t
90%
F
10%
@T
C
1.0
(W)
= 25
Min
150
0.8
0.6
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2
O
C
Typ
-3.8
400
400
0.1
4.5
3.0
0.7
4.0
3.0
5.0
6.0
5.0
1.2
35
13
-
-
-
-
-
GENERATOR
PULSE
●
(
Max
-5.5
100
100
O
2.4
1.0
6.0
4.0
1.0
5.0
5.0
8.0
9.0
8.0
1.8
125
50
25
Tel: [phone]
INPUT
C/W)
R
θ
-
-
-
-
GEN
jc
mV/
mmho
Units
%/
nA
µA
pF
ns
ns
Ω
V
V
A
V
O
O
C
(
C
O
170
C/W)
θ
ja
●
Conditions
V
V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
I
R
V
V
D
www.supertex.com
GS
GS
GS
GS
GS
DS
GS
GS
GS
GS
GS
DS
GS
DS
DD
GS
GS
GEN
= 600mA,
= 0.8 Max Rating,
= 25V, I
= 25V,
= 0V, I
= V
= V
= ±20V, V
= 0V, V
= 0V, T
= 10V, V
= 5.0V, I
= 10V, I
= 10V, I
= 0V,
= 25V,
= 0V, I
= 0V, I
= 25Ω
V
DD
DS
DS
R
L
(mA)
300
I
, I
, I
DR
D
SD
SD
D.U.T.
A
D
D
DS
D
OUTPUT
D
D
†
= 1.0mA
D
= 125
DS
= 1.0mA
= 1.0mA
= 600mA
= 600mA
= 500mA
= 500mA
= 500mA
DS
= Max Rating
= 75mA
= 25V
= 0V
VN2106
O
C
I
1.0
(A)
DRM