VN2106N3-G Supertex, VN2106N3-G Datasheet - Page 4

• Manufacturer Part Number: VN2106N3-G
• Description: MOSFET Small Signal 60V 4Ohm
• Manufacturer: Supertex

Specifications of VN2106N3-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.3 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
1.1
1.0
0.9
2.0
1.6
1.2
0.8
0.4
50
25
0
0
-50
0
0
Capacitance vs. Drain-to-Source Voltage
BV
V
DS
DSS
2
Transfer Characteristics
= 25V
10
0
Variation with Temperature
f = 1MHz
V
C
C
V
GS
4
RSS
ISS
DS
T
(volts)
j
50
20
(volts)
(°C)
●
6
1235 Bordeaux Drive, Sunnyvale, CA 94089
100
30
8
(cont.)
150
10
40
4
1.4
1.2
1.0
0.8
0.6
10
10
8
6
4
2
0
8
6
4
2
0
V
-50
GS(th)
0
0
●
Gate Drive Dynamic Characteristics
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On-Resistance vs. Drain Current
and R
V
30 pF
V
DS
0.5
0.2
GS
= 10V
0
DS(ON)
= 5V
Q
R
G
I
DS(ON)
D
(nanocoulombs)
1.0
0.4
90 pF
(amperes)
Variation with Temperature
T
j
50
(°C)
@ 10V, 0.5A
V
●
V
GS(th)
1.5
0.6
GS
www.supertex.com
= 10V
V
@ 1mA
DS
100
2.0
0.8
= 40V
150
2.5
1.0
2.0
1.6
1.2
0.8
0.4
0
VN2106