TN2501N8-G Supertex, TN2501N8-G Datasheet - Page 2

• Manufacturer Part Number: TN2501N8-G
• Description: MOSFET Small Signal 18V 2.5Ohm
• Manufacturer: Supertex

Specifications of TN2501N8-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.5 Ohm @ 3 V
• Drain-source Breakdown Voltage: 18 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 0.4 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Characteristics
Notes:
Electrical Characteristics
Notes:
Switching Waveforms and Test Circuit
ΔR
† I
‡ Mounted on FR5 Board, 25mm x 25mm x 1.57mm.
ΔV
R
BV
V
1. All D.C. parameters 100% tested at 25
2. All A.C. parameters sample tested.
Sym
t
I
C
C
t
C
d(OFF)
I
I
G
V
D(ON)
DS(ON)
TO-243AA (SOT-89)
d(ON)
GS(th)
GSS
DSS
DS(ON)
t
OSS
RSS
t
D
GS(th)
t
ISS
SD
rr
DSS
FS
r
f
(continuous) is limited by max rated T
Package
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
Gate body leakage
Zero gate voltage drain current
On-state drain current
Static drain-to-source on-state resistance
Change in R
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
Parameter
OUTPUT
INPUT
V
10V
0V
DD
0V
GS(th)
DS(ON)
10%
with temperature
with temperature
(continuous)
t
d(ON)
10%
t
(ON)
●
(mA)
400
90%
I
O
j
1235 Bordeaux Drive, Sunnyvale, CA 94089
D
.
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
t
r
(T
A
= 25
†
O
C unless otherwise specified)
90%
t
d(OFF)
t
(pulsed)
(OFF)
(mA)
560
I
D
t
90%
F
10%
Min
250
150
0.3
18
Power Dissipation
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2
@T
Typ
600
300
100
1.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
A
1.6
(W)
= 25
GENERATOR
‡
PULSE
O
0.75
C
Max
-4.0
100
110
1.0
1.0
3.5
2.5
5.0
8.0
1.8
10
25
60
35
15
15
●
-
-
-
-
INPUT
R
Tel: [phone]
GEN
mV/
mmho V
Units
%/
mA
nA
µA
pF
ns
ns
V
V
Ω
V
A
O
(
O
C
O
C V
C/W)
θ
15
jc
V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
I
R
V
V
Conditions
D
GS
GS
GS
GS
GS
DS
GS
GS
GS
GS
GS
GS
DS
GS
DS
DD
GS
GS
GEN
= 250mA,
●
= 0.8Max Rating,
= 3.0V, I
= 15V,
= 0V, I
= V
= V
= ±15V, V
= 0V, V
= 0V, T
= V
= 1.2V, I
= 2.0V, I
= 3.0V, I
= 3.0V, I
= 0V,
= 15V,
= 0V, I
= 0V, I
= 25Ω
www.supertex.com
(
O
78
C/W)
θ
DS
DS
DS
V
ja
DD
, I
, I
‡
R
= 3.0V
D
SD
SD
L
A
D
D
DS
= 1.0mA
D
D
D
D
D
D.U.T.
= 125°C
= 1.0mA
= 1.0mA
= 200mA
= 200mA
OUTPUT
DS
= Max Rating
= 200mA
= 3.0mA
= 50mA
= 200mA
= 200mA
= 0V
(mA)
560
I
DR
†
TN2501
(mA)
I
750
DRM