VN0550N3-G Supertex, VN0550N3-G Datasheet - Page 4

• Manufacturer Part Number: VN0550N3-G
• Description: MOSFET Small Signal 500V 60Ohm
• Manufacturer: Supertex

Specifications of VN0550N3-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 60 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.05 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
100
1.1
1.0
0.9
0.5
0.4
0.3
0.2
0.1
75
50
25
0
0
-50
0
0
Capacitance vs. Drain-to-Source Voltage
BV
f = 1MHz
DSS
2
Transfer Characteristics
10
0
Variation with Temperature
V
DS
V
= 25V
V
GS
4
DS
T
(volts)
j
50
20
(volts)
(°C)
●
6
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100
30
8
C
(cont.)
C
RSS
ISS
150
10
40
4
100
1.4
1.2
1.0
0.8
0.6
80
60
40
20
10
0
8
6
4
2
0
-50
0
0
●
V
(th)
Tel: [phone]
Gate Drive Dynamic Characteristics
On-Resistance vs. Drain Current
and R
V
V
GS
0.1
0.2
(th)
R
DS(ON)
= 5V
0
@ 1mA
DS
Q
50 pF
G
I
D
Variation with Temperature
(nanocoulombs)
0.4
0.2
(amperes)
@ 10V, 50mA
T
j
(°C)
50
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112 pF
105 pF
0.3
0.6
V
DS
V
V
GS
= 10V
DS
100
= 10V
0.4
= 40V
0.8
150
0.5
1.0
VN0550
1.8
1.4
1.0
0.6
0.2