TN0106N3-G Supertex, TN0106N3-G Datasheet - Page 2

• Manufacturer Part Number: TN0106N3-G
• Description: MOSFET Small Signal 60V 3Ohm
• Manufacturer: Supertex
• Type: Power MOSFETr

Specifications of TN0106N3-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.35 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 3Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Characteristics
Notes:
Electrical Characteristics
Switching Waveforms and Test Circuit
Notes:
ΔR
† I
ΔV
R
BV
V
1.
2.
Sym
t
I
C
C
t
C
d(OFF)
I
I
G
V
D(ON)
DS(ON)
d(ON)
GS(th)
GSS
DSS
DS(ON)
t
OSS
RSS
t
D
GS(th)
t
ISS
SD
rr
DSS
FS
r
f
(continuous) is limited by max rated T
All D.C. parameters 100% tested at 25
All A.C. parameters sample tested.
Package
TO-92
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
Gate body leakage
Zero Gate voltage drain current
On-state drain current
Static drain-to-source on-state resistance
Change in R
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
Parameter
OUTPUT
INPUT
V
10V
0V
DD
0V
GS(th)
DS(ON)
10%
with temperature
with temperature
(continuous)
t
d(ON)
10%
t
(ON)
●
(mA)
350
90%
I
j
1235 Bordeaux Drive, Sunnyvale, CA 94089
D
.
t
r
O
(T
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
A
= 25
†
O
C unless otherwise specified)
90%
t
d(OFF)
t
(pulsed)
(OFF)
2.0
(A)
I
D
t
90%
F
10%
Power Dissipation
2
0.75
Min
225
0.6
2.0
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
@T
C
(W)
1.0
= 25
Typ
-3.2
400
400
1.4
3.4
2.0
1.6
0.6
4.0
2.0
3.0
6.0
3.0
1.0
GENERATOR
50
25
-
-
-
-
-
PULSE
O
C
●
INPUT
R
Tel: [phone]
Max
GEN
-5.0
100
500
2.0
4.5
3.0
1.1
8.0
5.0
5.0
7.0
6.0
1.5
10
60
35
-
-
-
-
-
mV/
mmho V
(
Units
%/
O
125
C/W)
θ
µA
nA
pF
ns
ns
Ω
V
V
A
V
jc
O
O
C
C V
●
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
I
R
V
V
Conditions
V
D
www.supertex.com
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
GS
DS
DD
GS
GS
GEN
(
DS
= 1.0A,
O
170
C/W)
θ
= 0V, I
= V
= V
= ± 20V, V
= 0V, V
= 0V,T
= 5.0V, V
= 10V, V
= 4.5V, I
= 10V, I
= 10V, I
= 25V, I
= 0V,
= 25V,
= 25V,
= 0V, I
= 0V, I
V
= 0.8 Max Rating,
ja
DD
= 25Ω
R
L
DS
DS
D.U.T.
, I
, I
OUTPUT
D
A
SD
SD
D
D
DS
D
D
D
= 125°C
= 1.0mA
= 0.5mA
= 1.0mA
D
DS
(mA)
= 500mA
= 500mA
350
DS
= 500mA
I
= 500mA
= 500mA
= Max Rating
= 250mA
DR
DS
= 25V
= 25V
†
= 0V
TN0106
I
2.0
(A)
DRM