LFE3-150EA-7FN1156CTW Lattice, LFE3-150EA-7FN1156CTW Datasheet - Page 43

• Manufacturer Part Number: LFE3-150EA-7FN1156CTW
• Description: FPGA - Field Programmable Gate Array 149K LUTs 586 I/O 1.2V -7 Speed
• Manufacturer: Lattice

Specifications of LFE3-150EA-7FN1156CTW

• Number Of Programmable I/os: 133 to 586
• Data Ram Size: 6.85 Mbits
• Delay Time: 37 ns
• Supply Voltage (max): 1.26 V
• Supply Current: 18 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Supply Voltage (min): 1.14 V
• Package / Case: FPBGA-1156
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Lattice Semiconductor
To accomplish write leveling in DDR3, each DQS group has a slightly different delay that is set by DYN DELAY[7:0]
in the DQS Write Control logic block. The DYN DELAY can set 128 possible delay step settings. In addition, the
most significant bit will invert the clock for a 180-degree shift of the incoming clock.
LatticeECP3 input and output registers can also support DDR gearing that is used to receive and transmit the high
speed DDR data from and to the DDR3 Memory.
LatticeECP3 supports the 1.5V SSTL I/O standard required for the DDR3 memory interface. In addition, it supports
on-chip termination to VTT on the DDR3 memory input pins. For more information, refer to the sysIO section of this
data sheet.
Please see TN1180,
mentation in LatticeECP3.
sysI/O Buffer
Each I/O is associated with a flexible buffer referred to as a sysI/O buffer. These buffers are arranged around the
periphery of the device in groups referred to as banks. The sysI/O buffers allow users to implement the wide variety
of standards that are found in today’s systems including LVDS, BLVDS, HSTL, SSTL Class I & II, LVCMOS, LVTTL,
LVPECL, PCI.
sysI/O Buffer Banks
LatticeECP3 devices have six sysI/O buffer banks: six banks for user I/Os arranged two per side. The banks on the
bottom side are wraparounds of the banks on the lower right and left sides. The seventh sysI/O buffer bank (Config-
uration Bank) is located adjacent to Bank 2 and has dedicated/shared I/Os for configuration. When a shared pin is
not used for configuration it is available as a user I/O. Each bank is capable of supporting multiple I/O standards.
Each sysI/O bank has its own I/O supply voltage (V
has voltage references, V
uration Bank top side shares V
sysI/O bank 2. Figure 2-38 shows the seven banks and their associated supplies.
In LatticeECP3 devices, single-ended output buffers and ratioed input buffers (LVTTL, LVCMOS and PCI) are pow-
ered using V
pendent of V
Each bank can support up to two separate V
enced input buffers. Some dedicated I/O pins in a bank can be configured to be a reference voltage supply pin.
Each I/O is individually configurable based on the bank’s supply and reference voltages.
CCIO
CCIO
. LVTTL, LVCMOS33, LVCMOS25 and LVCMOS12 can also be set as fixed threshold inputs inde-
.
LatticeECP3 High-Speed I/O Interface
REF1
and V
REF1
REF2
and V
, which allow it to be completely independent from the others. The Config-
REF2
REF
from sysI/O bank 1 and right side shares V
voltages, V
CCIO
2-40
). In addition, each bank, except the Configuration Bank,
for more information on DDR Memory interface imple-
REF1
and V
REF2
LatticeECP3 Family Data Sheet
, that set the threshold for the refer-
REF1
Architecture
and V
REF2
from