NTE123AP NTE ELECTRONICS, NTE123AP Datasheet
NTE123AP
Manufacturer Part Number
NTE123AP
Description
Replacement Semiconductors NPN 40V 600mA HFE/300
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE123AP.pdf
(3 pages)
Specifications of NTE123AP
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
40V
Transition Frequency Typ Ft
250MHz
Power Dissipation Pd
625mW
Dc Collector Current
600mA
Dc Current Gain Hfe
300
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Absolute Maximum Ratings:
Collector−Emitter Voltage, V
Collector−Base Voltage, V
Emitter−Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction to Case, R
Thermal Resistance, Junction to Ambient, R
Electrical Characteristics: (T
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
OFF Characteristics
Collector−Emitter Breakdown Voltage
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON Characteristics (Note 1)
DC Current Gain
Derate Above 25°C
Derate Above 25°C
Parameter
EB
CB
A
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
= +25°C), P
= +25°C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
A
Audio Amplifier, Switch
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon NPN Transistor
= +25°C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
V
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(BR)CEO
(BR)CBO
(BR)EBO
(Compl to NTE159)
I
I
h
CEV
BEV
FE
D
D
thJC
NTE123AP
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
I
V
V
V
V
V
V
V
C
C
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
CE
CE
CE
CE
CE
CE
CE
= 1mA, I
= 0.1mA, I
= 0.1mA, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 35V, V
= 35V, V
= 1V, I
= 1V, I
= 1V, I
= 1V, I
= 1V, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
B
C
C
C
C
C
C
= 0, Note 1
E
= 0.1mA
= 1mA
= 10mA
= 150mA
= 500mA
EB(off)
EB(off)
= 0
= 0
= 0.4V
= 0.4V
Min
100
40
60
20
40
80
40
6
−
−
Typ
−
−
−
−
−
−
−
−
−
−
−55° to +150°C
−55° to +150°C
Max
300
0.1
0.1
−
−
−
−
−
−
−
5.0mW/°C
12mW/°C
83.3°C/W
200°C/W
625mW
600mA
Unit
µA
µA
1.5W
V
V
V
40V
60V
6V
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NTE123AP Summary of contents
Page 1
... Emitter−Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON Characteristics (Note 1) DC Current Gain Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. NTE123AP Silicon NPN Transistor Audio Amplifier, Switch (Compl to NTE159 CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter ON Characteristics (Note 1) (Cont’d) Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Small−Signal Characteristics Current Gain−Bandwidth Product Collector−Base Capacitance Emitter−Base Capacitance Input Impedance Voltage Feedback Ratio Small−Signal Current Gain Output Admittance Switching Characteristics Delay Time Rise ...
Page 3
Max .500 (12.7) Min .100 (2.54) .105 (2.67) Max .205 (5.2) Max .135 (3.45) Min Seating Plane .021 (.445) Dia Max .050 (1.27) .165 (4.2) Max .105 (2.67) Max ...