NTE159 NTE ELECTRONICS, NTE159 Datasheet - Page 2

• Manufacturer Part Number: NTE159
• Description: Replacement Semiconductors PNP -80V -1A BULK
• Manufacturer: NTE ELECTRONICS

Specifications of NTE159

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: 80V
• Power Dissipation Pd: 625mW
• Dc Collector Current: -800mA
• Dc Current Gain Hfe: 250
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Dynamic Characteristics
Output Capacitance
Input Capacitance
Small-Signal Current Gain
Noise Figure
Switching Characteristics
Turn-On Time
Turn-Off Time
Parameter
.105 (2.67) Max
.205 (5.2) Max
.100 (2.54)
(5.33)
(12.7)
.210
.500
Max
Min
Symbol
C
Ci
NF
h
t
t
on
off
ob
fe
b
A
V
V
I
I
f = 1kHz, B
V
I
C
C
B1
CB
BE
CC
= 500mA, V
= 100mA, V
E B C
= I
= 500mV, f = 1MHz
= 20V, I
= 30V, I
B2
= 50mA
Test Conditions
W
E
C
= 1Hz
= 0, f = 1MHz
CE
CE
= 500mA,
= 10V, f = 100MHz
= 10V, R
.050 (1.27)
.135 (3.45) Min
(4.2)
.165
Max
.105 (2.67) Max
S
= 1kΩ,
Seating Plane
.021 (.445) Dia Max
Min
-
-
1
-
-
-
Typ
-
-
-
-
-
-
Max
100
400
110
30
5
3
Unit
pF
pF
dB
ns
ns