SCS106AGC Rohm Semiconductor, SCS106AGC Datasheet - Page 2

• Manufacturer Part Number: SCS106AGC
• Description: DIODE SCHOTTKY 600V 6A TO220AC
• Manufacturer: Rohm Semiconductor

Specifications of SCS106AGC

• Diode Type: Silicon Carbide Schottky
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 6A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Mounting Type: *
• Package / Case: *
• Product: Schottky Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 6 A
• Max Surge Current: 24 A
• Configuration: Single
• Forward Voltage Drop: 1.5 V, 1.6 V
• Maximum Reverse Leakage Current: 120 uA
• Maximum Power Dissipation: 48 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Forward (vf) (max) @ If: -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Details

1.888.775.ROHM
Silicon Carbide Schottky Barrier Diodes
from ROHM Semiconductor
Choosing Silicon Carbide Instead of Silicon
Schottky barrier diodes (SBDs) have
the advantage of low forward losses
and negligible switching losses
compared to other diode technolo-
gies. But the narrow bandgap of
silicon (Si) SBDs limits their use to a
maximum voltage of around 200 V.
Si diodes that operate above 200 V
have higher V
Silicon carbide (SiC) is a compound
semiconductor with superior power
characteristics to silicon, including a
bandgap approximately three times
greater, a dielectric breakdown
F
and t
rr
.
field 10 times higher, and a thermal
coefficient three times larger. These
characteristics make it ideal for
power electronics applications.
Today, the need for higher efficien-
cy in end products is more critical
than ever. Although silicon power
products continue to see incremen-
tal improvements, devices based
on compound semiconductor
materials deliver significantly better
performance — and in some cases
not even possible with their silicon
counterparts.
www.rohm.com/us
Legend
This is certainly true for the most
basic components in power elec-
tronics: diodes and transistors.
Silicon carbide Schottky barrier
diodes have been available for more
than a decade but have not been
commercially viable until recently.
Volume production is now leading
to SiC’s acceptance in more and
more applications.
Si Schottky Barrier Diode
Si Super Fast Diode
Si Ultra Fast Diode
Si Fast Recovery (Epitaxial) Diode
Si Standard Recovery Diode
Silicon Carbide Schottky Barrier Diode
CNA110004_sg