AUIRFR48Z International Rectifier, AUIRFR48Z Datasheet - Page 2
![MOSFET N-CH 55V 42A DPAK](/photos/19/8/190892/ge3dpak05-40_sml.jpg)
AUIRFR48Z
Manufacturer Part Number
AUIRFR48Z
Description
MOSFET N-CH 55V 42A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.AUIRFR48ZTRL.pdf
(13 pages)
Specifications of AUIRFR48Z
Input Capacitance (ciss) @ Vds
1720pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11 mOhm @ 37A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
4V @ 50µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Power - Max
91W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
62A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
8860µohm
Rds(on) Test Voltage Vgs
10V
Power Dissipation Pd
91W
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
11 mOhms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
62 A
Power Dissipation
91 W
Mounting Style
SMD/SMT
Gate Charge Qg
40 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AUIRFR48Z
Manufacturer:
IR
Quantity:
12 500
Notes:
V
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
I
I
V
t
Q
t
Static Electrical Characteristics @ T
Dynamic Electrical Characteristics @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
V
D
S
2
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
oss
oss
oss
g
gs
gd
rr
R
Repetitive rating; pulse width limited by
Limited by T
Pulse width
C
charging time as C
80% V
(BR)DSS
max. junction temperature. (See fig. 11).
recommended for use above this value.
G
oss
eff.
= 25 , I
eff. is a fixed capacitance that gives the same
/ T
DSS
J
.
AS
Jmax
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 37A, V
1.0ms; duty cycle
, starting T
Parameter
oss
while V
GS
=10V. Part not
Parameter
Parameter
J
= 25°C, L = 0.11mH
DS
is rising from 0 to
2%.
J
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
55
Limited by T
repetitive avalanche performance.
This value determined from sample failure population,
starting T
I
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques
refer to application note #AN-994.
AS
0.054
1720
1000
8.86
–––
–––
–––
–––
–––
–––
–––
290
160
230
360
–––
–––
–––
= 37A, V
4.5
7.5
40
11
15
15
61
40
35
20
14
J
-200
–––
–––
–––
250
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
250
= 25°C, L = 0.11mH, R
4.0
1.3
11
20
60
37
40
28
GS
Jmax
=10V.
, see Fig.12a, 12b, 15, 16 for typical
V/°C
m
nC
nH
nC
µA
nA
pF
ns
ns
V
V
S
A
V
from package
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
and center of die contact
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
GS
GS
DS
GS
GS
GS
= 37A
= 37A
= 25°C, I
= 25°C, I
= 12
= 0V, I
= 10V, I
= V
= 25V, I
= 55V, V
= 55V, V
= 20V
= -20V
= 44V
= 10V
= 28V
= 10V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
G
, I
e
e
D
Conditions
Conditions
Conditions
= 25 ,
D
DS
S
F
D
D
DS
DS
= 250µA
GS
GS
= 50µA
= 37A, V
= 37A, V
= 37A
= 37A
= 0V to 44V
= 1.0V, ƒ = 1.0MHz
= 44V, ƒ = 1.0MHz
e
= 0V
= 0V, T
www.irf.com
D
e
= 1mA
DD
GS
J
= 125°C
= 28V
G
= 0V
f
e
S
D