AUIRFR48Z International Rectifier, AUIRFR48Z Datasheet - Page 5

• Manufacturer Part Number: AUIRFR48Z
• Description: MOSFET N-CH 55V 42A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFR48Z

• Input Capacitance (ciss) @ Vds: 1720pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 37A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 4V @ 50µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Power - Max: 91W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 62A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 8860µohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 91W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 11 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 62 A
• Power Dissipation: 91 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 40 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1000.00
10000
1000
100.00
100
10.00
1.00
0.10
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Drain-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
C oss
T J = 175°C
C iss
C rss
V SD , Source-to-Drain Voltage (V)
Forward Voltage
f = 1 MHZ
10
T J = 25°C
V GS = 0V
100
1000
100
0.1
10
Fig 8. Maximum Safe Operating Area
1
20
16
12
8
4
0
1
Fig 6. Typical Gate Charge vs.
0
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 37A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
10
Q G Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
20
V DS = 44V
VDS= 28V
VDS= 11V
DC
10msec
10
30
1msec
100µsec
40
50
100
5
60