AUIRFR48Z International Rectifier, AUIRFR48Z Datasheet - Page 4

• Manufacturer Part Number: AUIRFR48Z
• Description: MOSFET N-CH 55V 42A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFR48Z

• Input Capacitance (ciss) @ Vds: 1720pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 37A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 4V @ 50µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Power - Max: 91W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 62A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 8860µohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 91W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 11 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 62 A
• Power Dissipation: 91 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 40 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
1000
4
100
100
0.1
Fig 3. Typical Transfer Characteristics
10
10
Fig 1. Typical Output Characteristics
1
1
0.1
2
TOP
BOTTOM
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
T J = 25°C
1
4.5V
6
Tj = 25°C
60µs PULSE WIDTH
V DS = 25V
60µs PULSE WIDTH
8
10
10
100
12
1000
100
Fig 4. Typical Forward Transconductance
Fig 2. Typical Output Characteristics
60
50
40
30
20
10
10
0
1
0.1
0
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
I D ,Drain-to-Source Current (A)
vs. Drain Current
20
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
T J = 175°C
T J = 25°C
V DS = 10V
380µs PULSE WIDTH
40
Tj = 175°C
4.5V
60µs PULSE WIDTH
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10
60
100
80