BLF6G10L-40BRN,112 NXP Semiconductors, BLF6G10L-40BRN,112 Datasheet - Page 3
BLF6G10L-40BRN,112
Manufacturer Part Number
BLF6G10L-40BRN,112
Description
TRANS LDMOS SOT1112A3/B3
Manufacturer
NXP Semiconductors
Specifications of BLF6G10L-40BRN,112
Voltage - Rated
65V
Transistor Type
LDMOS (Dual)
Frequency
*
Gain
23dB
Current Rating
11A
Current - Test
*
Voltage - Test
28V
Power - Output
2.5W
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
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NXP’s firsts in RF
1963 – First transistors and diodes on 0.75 inch wafers
1964 – First RF wideband transistor with 1.5 GHz max
1970 – BFR90, a 5 GHz RF wideband transistor
1978 – BFQ33, a 14 GHz RF wideband transistor
1989 – Output matching in common emitter base station transistors
1992 – Highest power broadcast bipolar devices
1996 – Highest performance 2 GHz LDMOS
2004 – Gen5 LDMOS which becomes the industry’s most advanced process for power amplifiers
2006 – Fully integrated Doherty transistors
2007 – Industry’s first fully integrated, silicon-based IC solution for satellite: TFF1004HN
2008 – High speed data converters based on JESD204A standard
2009 – 1kW single transistor (BLF578) power amplifier for FM radio (88 to 108 MHz)
2009 – State-of-the-art, next generation SiGe:C BiCMOS QUBiC4Xi technology
“I’m proud to present the latest edition of our RF Manual. It covers NXP’s entire range of RF products in one comprehensive manual,
and I’m convinced that you’ll find the 14
edition even more useful in your daily design work.”
th
Kind regards,
John Croteau
Sr. Vice President & General Manager
Business Line High Performance RF
RF Manual web page
www.nxp.com/rfmanual
NXP Semiconductors RF Manual 14
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edition
5
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