BLF6G10L-40BRN NXP Semiconductors, BLF6G10L-40BRN Datasheet
BLF6G10L-40BRN
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BLF6G10L-40BRN Summary of contents
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... BLF6G10L-40BRN Power LDMOS transistor Rev. 3 — 16 November 2010 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz. Table 1. Typical RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz ...
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... Thermal characteristics thermal resistance from junction to case All information provided in this document is subject to legal disclaimers. Rev. 3 — 16 November 2010 BLF6G10L-40BRN Power LDMOS transistor Simplified outline Graphic symbol [ ...
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... DPCH 821 MHz; RF performance case Symbol Parameter PAR 7.1 Ruggedness in class-AB operation The BLF6G10L-40BRN is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 390 mA BLF6G10L-40BRN Product data sheet Characteristics C per section ...
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... Figure 1. L gate Definition of transistor impedance 001aam480 80 (1) D (2) (%) (W) L Fig 3. All information provided in this document is subject to legal disclaimers. Rev. 3 — 16 November 2010 BLF6G10L-40BRN Power LDMOS transistor [ (Ω) 5.3 + j2.9 5.6 + j2.3 drain 001aaf059 (dB ...
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... MHz ( 821 MHz Fig 5. 2-carrier W-CDMA adjacent channel power ratio and peak aspect ratio as function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 16 November 2010 BLF6G10L-40BRN Power LDMOS transistor 001aam483 (1) PAR (2) ACPR 5M ...
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... All information provided in this document is subject to legal disclaimers. Rev. 3 — 16 November 2010 BLF6G10L-40BRN Power LDMOS transistor C3 C9 BLF6G10L-40BRN Output Circuit RO4350 30 MII NXP C6 BLF6G10L-40BRN Output Circuit RO4350 30 MII NXP C10 014aab232 ...
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... 9.65 9.65 9.65 9.65 1.14 17.12 9.40 9.40 9.40 9.40 0.89 16.10 0.38 0.38 0.38 0.38 0.045 0.674 0.37 0.37 0.37 0.37 0.035 0.634 References JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 3 — 16 November 2010 BLF6G10L-40BRN Power LDMOS transistor ( 3.00 3.30 1.70 20.45 9.91 15.24 2.69 2.92 1.45 20.19 9.65 0.118 0.130 0.067 ...
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... The value of VSWR has been corrected. Preliminary data sheet Preliminary data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 16 November 2010 BLF6G10L-40BRN Power LDMOS transistor Change notice Supersedes - BLF6G10L-40BRN v.2 has been changed to 390 mA BLF6G10L-40BRN v © NXP B.V. 2010. All rights reserved ...
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... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 3 — 16 November 2010 BLF6G10L-40BRN Power LDMOS transistor © NXP B.V. 2010. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 3 — 16 November 2010 BLF6G10L-40BRN Power LDMOS transistor © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF6G10L-40BRN All rights reserved. Date of release: 16 November 2010 ...