BLF6G10L-40BRN NXP Semiconductors, BLF6G10L-40BRN Datasheet - Page 7

• Manufacturer Part Number: BLF6G10L-40BRN
• Description: 40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
9. Package outline
Fig 7.
BLF6G10L-40BRN
Product data sheet
Flanged ceramic package; 2 mounting holes; 6 leads
Dimensions
inches
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
mm
Unit
SOT1112A
Outline
version
Package outline SOT1112A
(1)
max
nom
max
nom
min
min
H
0.183
0.148
4.65
3.76
A
U
A
2
0.045
0.035
1.14
0.89
b
A
Z
0.207
0.197
5.26
5.00
IEC
b
1
0.007
0.004
0.18
0.10
c
4
6
b
L
9.65
9.40
0.38
0.37
D
JEDEC
9.65
9.40
0.38
0.37
All information provided in this document is subject to legal disclaimers.
D
1
D
U
b
9.65
9.40
0.38
0.37
References
D
q
1
2
1
1
1
E
Rev. 3 — 16 November 2010
0
9.65
9.40
0.38
0.37
E
1
JEITA
0.045
0.035
1.14
0.89
w
F
2
scale
5
5
7
17.12
16.10
0.674
0.634
C
H
3
0.118
0.106
3.00
2.69
L
10 mm
C
F
B
p
0.130
0.115
3.30
2.92
p
w
1
0.067
0.057
1.70
1.45
Q
BLF6G10L-40BRN
A
(2)
15.24
B
0.6
q
20.45
20.19
0.805
0.795
European
projection
U
1
E
1
Power LDMOS transistor
9.91
9.65
0.39
0.38
U
2
Q
0.25
0.01
w
1
© NXP B.V. 2010. All rights reserved.
c
0.51
0.02
w
2
Issue date
09-10-12
10-02-02
E
0.235
0.225
5.97
5.72
sot1112a_po
Z
SOT1112A
64
62
64
62
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