BLF6G10L-40BRN NXP Semiconductors, BLF6G10L-40BRN Datasheet - Page 4

• Manufacturer Part Number: BLF6G10L-40BRN
• Description: 40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF6G10L-40BRN
Product data sheet
Fig 2.
(dB)
G
(1) f = 791 MHz
(2) f = 821 MHz
p
24
23
22
21
20
5
V
One-tone CW power gain and drain efficiency
as function of output power; typical values
DS
= 28 V; I
7.3.1 1 Tone CW
G
7.2 Impedance information
7.3 Graphs
D
p
15
Dq
= 390 mA.
Table 9.
I
[1]
f
(MHz)
800
810
Dq
Fig 1.
= 390 mA; main transistor V
Z
25
S
and Z
(1)
(2)
Definition of transistor impedance
Typical impedance per section
L
defined in
35
All information provided in this document is subject to legal disclaimers.
001aam480
P
L
(W)
Figure
Rev. 3 — 16 November 2010
45
80
60
40
20
0
(%)
1.
D
DS
Z
(Ω)
2.0 − j5.0
2.0 − j5.5
= 28 V
S
[1]
Fig 3.
gate
Z
RL
(dB)
S
(1) f = 791 MHz
(2) f = 821 MHz
in
19
18
17
16
15
5
V
One-tone CW input return loss as function of
output power; typical values
DS
= 28 V; I
001aaf059
(1)
(2)
Z
drain
BLF6G10L-40BRN
L
15
Dq
= 390 mA.
Z
(Ω)
5.3 + j2.9
5.6 + j2.3
25
L
[1]
Power LDMOS transistor
35
© NXP B.V. 2010. All rights reserved.
001aam481
P
L
(W)
45
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