BLF6G10L-40BRN NXP Semiconductors, BLF6G10L-40BRN Datasheet - Page 2

• Manufacturer Part Number: BLF6G10L-40BRN
• Description: 40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF6G10L-40BRN
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Pin
1
2
3
4, 5
6, 7
Type number
BLF6G10L-40BRN
Symbol
V
V
V
I
T
Symbol Parameter
R
T
D
stg
j
DS
GS
GS(sense)
th(j-case)
Connected to flange.
thermal resistance from junction to case
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
sense gate-source voltage
drain current
storage temperature
junction temperature
drain
gate
source
sense drain
sense gate
Description
All information provided in this document is subject to legal disclaimers.
Package
Name Description
-
Rev. 3 — 16 November 2010
flanged ceramic package; 2 mounting holes; 6 leads
Conditions
[1]
Conditions
T
Simplified outline
case
BLF6G10L-40BRN
4
6
= 80 °C; P
1
2
L
Power LDMOS transistor
= 2.5 W(CW)
5
7
3
Graphic symbol
-
Min
-
−0.5
−0.5
-
−65
© NXP B.V. 2010. All rights reserved.
2
1
Max
65
+11
+9
11
+150
200
Version
SOT1112A
3
4, 5
Typ Unit
1.7
sym126
2 of 11
Unit
V
V
V
A
°C
°C
K/W
6, 7