BLF6G10L-40BRN,112 NXP Semiconductors, BLF6G10L-40BRN,112 Datasheet - Page 48
BLF6G10L-40BRN,112
Manufacturer Part Number
BLF6G10L-40BRN,112
Description
TRANS LDMOS SOT1112A3/B3
Manufacturer
NXP Semiconductors
Specifications of BLF6G10L-40BRN,112
Voltage - Rated
65V
Transistor Type
LDMOS (Dual)
Frequency
*
Gain
23dB
Current Rating
11A
Current - Test
*
Voltage - Test
28V
Power - Output
2.5W
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
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C-family application information
Push-pull amplifiers
Power doublers
Optical receiver
50
Application
Optical node
Optical receiver
Distribution amplifier
Line extender amplifier
Terminating amplifier
Parameters
Power gain (dB)
Slope (dB)
Composite triple beat (dBc)
Composite 2
Noise (@ f
Total current comsumption (mA)
Frequency range (MHz)
Parameters
Power gain (dB)
Slope (dB)
Composite triple beat (dBc)
Composite 2
Noise (@ f
Total current comsumption (mA)
Frequency range (MHz)
Parameters
Responsivity (V/W)
Slope (dB)
Third order intermodulation distortion (dB)
Second order intermodulation distortion (dB)
Noise (@ f
Total current consumption (mA)
Frequency range (MHz)
Connector
NXP Semiconductors RF Manual 14
MAX
MAX
MAX
nd
nd
) (dB)
) (dB)
) pA/Sqrt (Hz)
order distortion (dBc)
order distortion (dBc)
th
edition
BGY588C
•
range
range
range
range
range
range
max.
max.
max.
max.
max.
max.
max.
max.
max.
min.
typ.
typ.
typ.
typ.
typ.
BGE788C
•
BGY588C
BGD712C
0.2 - 1.7
40 - 550
CGY888C
34.5
325
-57
-62
0.5 - 1.5
40 - 750
8
•
•
•
18.5
-62
-63
395
7
BGO807C
40 - 870
0 - 2
800
190
-54
-71
8.5
- / SCO / FCO
BGD712C
BGE788C
0.3 - 2.3
40 - 750
•
•
•
•
34.2
305
CGD944C
-49
-52
8
40 - 870
BGO807C
1 - 2
450
-66
-67
25
5
•
•
•
•
CGY888C
40 - 870
1.5 typ.
3 typ.
35.5
-64
280
-66
CGD944C
BGO807CE
CGD942C
40 - 870
•
•
•
•
0 - 2
800
190
-53
-71
8.5
BGY835C
40 - 870
1 - 2
450
-66
-67
23
40 - 870
1.5 typ.
5
CGD942C
340
-60
-55
34
7
•
•
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