BFG97,135 NXP Semiconductors, BFG97,135 Datasheet - Page 12

• Manufacturer Part Number: BFG97,135
• Description: TRANS NPN 15V 100MA 5GHZ SOT223
• Manufacturer: NXP Semiconductors

Specifications of BFG97,135

• Package / Case: TO-261-4, TO-261AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5.5GHz
• Power - Max: 1W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 70mA, 10V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 25
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 100 mA
• Power Dissipation: 1 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure (db Typ @ F): -
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
September 1995
handbook, full pagewidth
handbook, full pagewidth
NPN 5 GHz wideband transistor
I
I
Z
C
C
o
= 70 mA; V
= 70 mA; V
= 50 .
CE
CE
= 10 V; T
= 10 V; T
amb
amb
= 25 C.
= 25 C.
Fig.24 Common emitter reverse transmission coefficient (S
+ j
180
– j
Fig.25 Common emitter output reflection coefficient (S
o
0
150 o
0.5
10
10
150 o
0.4
10
25
25
0.3
120 o
120 o
0.2
25
0.1
2 GHz
40 MHz
90 o
12
90 o
50
50
50
2 GHz
40 MHz
100
60 o
60 o
250
100
100
MBB804
MBB805
30 o
30 o
250
250
22
0 o
).
12
).
ϕ
ϕ
Product specification
BFG97