BFG520/X,235 NXP Semiconductors, BFG520/X,235 Datasheet - Page 14

• Manufacturer Part Number: BFG520/X,235
• Description: TRANS RF NPN 9GHZ 15V SOT143
• Manufacturer: NXP Semiconductors

Specifications of BFG520/X,235

• Package / Case: TO-253-4, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 2.1dB @ 900MHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Dc Current Gain Hfe Max: 250
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 70 mA
• Power Dissipation: 300 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
Revision history
Revision history
Document ID
BFG520XR_N_4
Modifications:
BFG520XR_CNV_3
BFG520XR_2
BFG520XR_1
Release date
20071123
19950901
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Pinning table on page 2; changed code
Data sheet status
Product data sheet
Product specification
Product specification
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BFG520; BFG520/X; BFG520/XR
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]
Change notice
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NPN 9 GHz wideband transistor
Supersedes
BFG520XR_CNV_3
BFG520XR_2
BFG520XR_1
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Document identifier: BFG520XR_N_4
Date of release: 23 November 2007
All rights reserved.