BFG520/X,235 NXP Semiconductors, BFG520/X,235 Datasheet - Page 8

• Manufacturer Part Number: BFG520/X,235
• Description: TRANS RF NPN 9GHZ 15V SOT143
• Manufacturer: NXP Semiconductors

Specifications of BFG520/X,235

• Package / Case: TO-253-4, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 2.1dB @ 900MHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Dc Current Gain Hfe Max: 250
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 70 mA
• Power Dissipation: 300 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
handbook, full pagewidth
handbook, full pagewidth
NPN 9 GHz wideband transistor
I
f = 900 MHz; Z
I
f = 2 GHz; Z
C
C
= 5 mA; V
= 5 mA; V
o
CE
CE
= 50 .
o
= 6 V;
= 6 V;
= 50 .
pot. unst.
region
180
180
G max = 13 dB
0
0
135
135
135
135
0.2
0.2
0.2
0.2
MS
G = 12 dB
0.2
0.2
G = 11 dB
G = 10 dB
stability
circle
0.5
0.5
0.5
0.5
Fig.15 Noise circle figure.
Fig.16 Noise circle figure.
Rev. 04 - 23 November 2007
F min = 1. 9 dB
0.5
0.5
F = 3 dB
OPT
F = 2 dB
F = 1.5 dB
F = 2 dB
90
90
90
90
F = 2.5 dB
1
1
1
1
1
1
F min = 1. 1 dB
F = 3 dB
OPT
BFG520; BFG520/X; BFG520/XR
2
2
2
2
2
2
5
5
45
45
45
45
5
5
5
5
MRA684
MRA685
0
0
1.0
0.8
0.6
0.4
0.2
0
1.0
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
8 of 14