BFG520/X,235 NXP Semiconductors, BFG520/X,235 Datasheet - Page 6

• Manufacturer Part Number: BFG520/X,235
• Description: TRANS RF NPN 9GHZ 15V SOT143
• Manufacturer: NXP Semiconductors

Specifications of BFG520/X,235

• Package / Case: TO-253-4, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 2.1dB @ 900MHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Dc Current Gain Hfe Max: 250
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 70 mA
• Power Dissipation: 300 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
In Figs 7 to 10, G
MSG = maximum stable gain; G
gain.
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistor
V
I
C
CE
= 5 mA; V
gain
(dB)
gain
(dB)
= 6 V; f = 900 MHz; T
Fig.7 Gain as a function of collector current.
25
20
15
10
50
40
30
20
10
5
0
0
10
0
Fig.9 Gain as a function of frequency.
CE
G UM
MSG
MSG
= 6 V; T
UM
= maximum unilateral power gain;
amb
10
10
amb
2
= 25 C.
= 25 C.
max
10
20
= maximum available
3
I C (mA)
f (MHz)
G max
G max
G UM
MRA674
MRA676
Rev. 04 - 23 November 2007
10
30
4
handbook, halfpage
handbook, halfpage
V
I
C
CE
BFG520; BFG520/X; BFG520/XR
= 20 mA; V
gain
(dB)
gain
(dB)
Fig.8 Gain as a function of collector current.
= 6 V; f = 2 GHz; T
25
20
15
10
50
40
30
20
10
5
0
0
10
Fig.10 Gain as a function of frequency.
0
MSG
CE
= 6 V; T
amb
10
10
amb
2
G UM
MSG
= 25 C.
= 25 C.
G max
G UM
10
20
3
Product specification
I C (mA)
f (MHz)
G max
MRA675
MRA677
6 of 14
10
30
4