MSC7116VF1000 Freescale Semiconductor, MSC7116VF1000 Datasheet - Page 20

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MSC7116VF1000

Manufacturer Part Number
MSC7116VF1000
Description
DSP 16BIT W/DDR CTRLR 400-MAPBGA
Manufacturer
Freescale Semiconductor
Series
MSC711x StarCorer
Type
Fixed Pointr
Datasheet

Specifications of MSC7116VF1000

Interface
Host Interface, I²C, UART
Clock Rate
266MHz
Non-volatile Memory
ROM (8 kB)
On-chip Ram
400kB
Voltage - I/o
3.30V
Voltage - Core
1.20V
Operating Temperature
-40°C ~ 105°C
Mounting Type
*
Package / Case
400-MAPBGA
Device Core Size
16b
Format
Fixed Point
Clock Freq (max)
266MHz
Mips
266
Device Input Clock Speed
266MHz
Ram Size
192KB
Program Memory Size
Not RequiredKB
Operating Supply Voltage (typ)
1.2/2.5/3.3V
Operating Supply Voltage (min)
1.14/2.38/3.14V
Operating Supply Voltage (max)
1.26/2.63/3.47V
Operating Temp Range
-40C to 105C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
400
Package Type
MA-BGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MSC7116VF1000
Manufacturer:
SONY
Quantity:
6 218
Part Number:
MSC7116VF1000
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Electrical Characteristics
Table 6 lists the DDR DRAM capacitance.
20
Tri-state (high impedance off state) leakage current,
V
Signal low input current, V
Signal high input current, V
Output high voltage, I
Output low voltage, I
Typical power at 266 MHz
Notes:
Input/output capacitance: DQ, DQS
Delta input/output capacitance: DQ, DQS
Note:
IN
= V
DDIO
1.
2.
3.
4.
5.
These values were measured under the following conditions:
• V
• f = 1 MHz
• T
• V
• V
A
DDM
OUT
OUT
= 25°C
The value of V
V
exceed ±2% of the DC value.
V
to V
Output leakage for the memory interface is measured with all outputs disabled, 0 V ≤ V
The core power values were measured.using a standard EFR pattern at typical conditions (25°C, 300 MHz, 1.2 V core).
REF
TT
= V
(peak to peak) = 0.2 V
= 2.5 V ± 0.125 V
REF
is not applied directly to the MSC7116 device. It is the level measured at the far end signal termination. It should be equal
OL
Characteristic
must be equal to 50% of V
DDM
OH
. This rail should track variations in the DC level of V
= 5 mA
= –2 mA, except open drain pins
/2
5
IL
IH
= 0.4 V
= 2.0 V
DDM
Parameter/Condition
at the MSC7116 device must remain within 50 mV of V
Table 5. DC Electrical Characteristics (continued)
DDM
Table 6. DDR DRAM Capacitance
MSC7116 Data Sheet, Rev. 13
and track V
Symbol
DDM
V
V
I
I
OZ
I
P
OH
H
OL
L
variations as measured at the receiver. Peak-to-peak noise must not
REF
.
Min
–1.0
–1.0
–1.0
2.0
DDM
at the DRAM device at all times.
Symbol
Typical
293.0
C
0.09
0.09
0.09
C
3.0
OUT
DIO
0
IO
≤ V
DDM
Freescale Semiconductor
.
Max
30
30
Max
0.4
1
1
1
Unit
pF
pF
Unit
mW
µA
µA
µA
V
V

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