JS28F256P30TFA NUMONYX, JS28F256P30TFA Datasheet - Page 65

• Manufacturer Part Number: JS28F256P30TFA
• Description: IC FLASH 256MBIT 110NS 56TSOP
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of JS28F256P30TFA

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 256M (16Mx16)
• Speed: 110ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 2 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 56-TSOP
• Package: 56TSOP
• Cell Type: NOR
• Density: 256 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Top
• Typical Operating Supply Voltage: 1.8 V
• Sector Size: 32KByte x 4|128KByte x 255
• Timing Type: Asynchronous|Synchronous
• Interface Type: Parallel|Serial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 902052; 902052; JS28F256P30TF 902052

P30-65nm
17.2
Figure 33: Decoder for SCSP P30-65nm
Note:
Table 31: Valid Combinations for Dual-Die Products
Note:
Datasheet
65
Package Designator
Product Designator
Device Density
Product Family
RD = Numonyx™ SCSP, leaded
PF = Numonyx™ SCSP, lead - free
RC = 64- Ball Easy BGA , leaded
PC = 64- Ball Easy BGA, lead - free
48F = Numonyx™ Flash Memory Only
P = Numonyx
0 = No die
4 = 256-Mbit
0 = No die
The last digit is randomly assigned to cover packing media and/or features or other specific configuration
The “B” parameter is used for Top(Die1)/Bot(Die2) stack option in the 512-Mbit density.
PF48F4000P0ZBQE*
PF48F4000P0ZTQE*
®
256-Mbit
Axcell
SCSP Products
TM
Flash Memory (P30)
P
F 4
8
F 4 4
RD48F4400P0VBQE*
RC48F4400P0VB0E*
PF48F4400P0VBQE*
PC48F4400P0VB0E*
0
512-Mbit
0
P 0
*
V
B 0
E
*
Ballout Descriptor
I/ O Voltage, CE # Configuration
Device Features*
Device Details
Parameter Location
V
V
E = 65 nm lithography
0 = Discrete ballout
B = Bottom Parameter
T = Top Parameter
Z = Individual Chip Enable(s)
V = Virtual Chip Enable(s)
Q = QUAD+ ballout
CC
CCQ
= 1. 7 to 2. 0 V
= 1. 7 to 3. 6 V
Order Number: 320002-10
.
Mar 2010