PC28F256J3F95A NUMONYX, PC28F256J3F95A Datasheet - Page 53

• Manufacturer Part Number: PC28F256J3F95A
• Description: IC FLASH 256MBIT 95NS 64EZBGA
• Manufacturer: NUMONYX
• Series: StrataFlash™r

Specifications of PC28F256J3F95A

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 256M (32M x8, 16M x16)
• Speed: 95ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-TBGA
• Cell Type: NOR
• Density: 256Mb
• Access Time (max): 95ns
• Interface Type: Parallel
• Address Bus: 25/24Bit
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: EZBGA
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 32M/16M
• Supply Current: 31mA
• Mounting: Surface Mount
• Pin Count: 64
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 898244; 898244; PC28F256J3F95 898244

Numonyx™ StrataFlash
A.2.4
Table 32: System Interface Information
A.2.5
Table 33: Device Geometry Definition
December 2008
319942-02
Offset
Offset
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
2Ah
2Ch
2Dh
27h
28h
Length
Length
1
1
1
1
1
1
1
1
1
1
1
1
1
2
2
1
4
System Interface Information
The following device information can optimize system interface software.
Device Geometry Definition
This field provides critical details of the flash device geometry.
V
V
V
V
“n” such that typical single word program time-out = 2
“n” such that typical max. buffer write time-out = 2
“n” such that typical block erase time-out = 2
“n” such that typical full chip erase time-out = 2
“n” such that maximum word program time-out = 2
“n” such that maximum buffer write time-out = 2
“n” such that maximum block erase time-out = 2
“n” such that maximum chip erase time-out = 2
“n” such that device size = 2
Flash device interface:
“n” such that maximum number of bytes in write buffer = 2
Number of erase block regions within device:
1. x = 0 means no erase blocking; the device erases in “bulk”
2. x specifies the number of device or partition regions with one or more
contiguous same-size erase blocks
3. Symmetrically blocked partitions have one blocking region
4. Partition size = (total blocks) x (individual block size)
Erase Block Region 1 Information
bits 0–15 = y, y+1 = number of identical-size erase blocks
bits 16–31 = z, region erase block(s) size are z x 256 bytes
CC
CC
PEN
PEN
®
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
Embedded Memory (J3-65nm)
logic supply minimum program/erase voltage
logic supply maximum program/erase voltage
[programming] supply minimum program/erase voltage
[programming] supply maximum program/erase voltage
x8 async
28:00,29:00 28:01,29:00 28:02,29:00
Description
n
in number of bytes
Description
x16 async
n
ms
n
n
x8/x16 async
n
n
times typical
ms
times typical
times typical
n
n
µs
times typical
n
µs
n
Add.
1B:
1C:
1D:
1E:
1F:
20:
21:
22:
23:
24:
25:
26:
Code See Table Below
27:
28:
2A:
2B:
2C:
2D:
2E:
30:
29:
2F:
Code
Hex
--27
--36
--00
--00
--08
--0A
--0A
--00
--01
--02
--02
--00
--02
--00
--0A
--00
--01
1024 µs
4096 µs
Datasheet
256 µs
512 µs
Value
2.7 V
3.6 V
0.0 V
0.0 V
1 s
NA
4 s
NA
bytes
1024
x16
x8/
1
53