RC28F256P33BFA NUMONYX, RC28F256P33BFA Datasheet - Page 47
![IC FLASH 256MBIT 95NS 64EZBGA](/photos/7/31/73127/rc28f256p33bf_898897_sml.jpg)
RC28F256P33BFA
Manufacturer Part Number
RC28F256P33BFA
Description
IC FLASH 256MBIT 95NS 64EZBGA
Manufacturer
NUMONYX
Series
Axcell™r
Specifications of RC28F256P33BFA
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
256M (16Mx16)
Speed
95ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
64-EZBGA
Cell Type
NOR
Density
256Mb
Interface Type
Parallel/Serial
Boot Type
Bottom
Address Bus
25b
Operating Supply Voltage (typ)
2.5/3/3.3V
Operating Temp Range
-40C to 85C
Package Type
EZBGA
Sync/async
Async/Sync
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.3V
Operating Supply Voltage (max)
3.6V
Word Size
16b
Number Of Words
32M
Supply Current
50mA
Mounting
Surface Mount
Pin Count
64
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
898897
898897
RC28F256P33BF 898897
898897
RC28F256P33BF 898897
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RC28F256P33BFA
Manufacturer:
Micron Technology Inc
Quantity:
10 000
P33-65nm
Table 19: DC Current Characteristics (Sheet 2 of 2)
14.2
Table 20: DC Voltage Characteristics
Datasheet
47
Notes:
1.
2.
3.
4.
5.
6.
7.
Notes:
1.
2.
3.
V
V
Sym
I
Sym
V
V
V
V
PPBC
V
V
V
LKOQ
PPLK
LKO
PPH
PPL
OH
OL
IH
IL
All currents are RMS unless noted. Typical values at typical VCC, T
I
Sampled, not 100% tested.
I
I
Characteristics” on page 58
if V
the I
Synchronous read mode is not supported with TTL inputs.
V
less.
VPP ≤ V
VPP Blank Check
VPP Voltage Supply
(Logic Level)
Buffered Enhanced
Factory Programming
VPP
CCS
CCES
CCW
VPP Lock-Out Voltage
IL
Output High Voltage
Output Low Voltage
VCCQ Lock Voltage
Input High Voltage
Input Low Voltage
VCC Lock Voltage
IN
can undershoot to –1.0 V for duration of 2ns or less and V
, I
PPS,
is the average current measured over any 5 ms time interval 5 µs after CE# is deasserted.
is specified with the device deselected. If device is read while in erase suspend, current is I
> VCC the input load current increases to 10uA max.
Parameter
CCE
PPLK
I
DC Voltage Characteristics
PPWS,
measured over typical or max times specified in
Parameter
inhibits erase and program operations. Do not use V
I
PPES
Will increase to 200uA when VPP/WP# is at V
(VCCQ = 2.3 V – 3.6 V)
VCCQ – 0.4
VCCQ – 0.2
-0.5
Min
1.5
0.9
1.5
8.5
-
-
CMOS Inputs
.
0.05
0.05
Typ
2.3 V - 3.6
(VCCQ =
VCCQ + 0.5
Inputs
CMOS
V)
Max
0.4
0.2
0.4
3.6
9.5
-
-
-
Max
0.10
0.10
0.05
0.05
(VCCQ = 2.4 V – 3.6 V)
VCCQ – 0.2
Typ
TTL Inputs
2.4 V - 3.6
(VCCQ =
-0.5
Min
Section 15.5, “Program and Erase
2.0
1.5
0.9
1.5
8.5
TTL Inputs
V)
-
-
IH
Max
0.10
0.10
can overshoot to V
PPL
PPH
C
and V
= +25 °C.
.
VCCQ + 0.5
Unit
mA
Max
(1)
0.6
0.2
0.4
3.6
9.5
PPH
-
-
-
outside their valid ranges
VPP = V
VPP = V
CCQ
Unit
V
V
V
V
V
V
V
V
V
Test Conditions
PPL,
PPH,
+ 1.0 V for durations of 2ns or
erase in progress
erase in progress
VCCQ = VCCQ Min
VCCQ = VCCQ Min
Test Conditions
VCC = VCC Min
VCC = VCC Min
I
I
OH
Order Number:320003-09
OL
CCES
= –100 µA
= 100 µA
plus I
.
CCR
.
Mar 2010
Notes
Notes
3
2
3
-
-
-
-