SI4866DY-T1-E3 Vishay, SI4866DY-T1-E3 Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/6/697/vishay_sml.jpg)
SI4866DY-T1-E3
Manufacturer Part Number
SI4866DY-T1-E3
Description
MOSFET Power 12 Volt 11 Amp 3.0W
Manufacturer
Vishay
Type
Power MOSFETr
Specifications of SI4866DY-T1-E3
Transistor Polarity
N-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0055 Ohm @ 4.5 V
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
11 A
Power Dissipation
1600 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SO-8
Continuous Drain Current Id
17A
Drain Source Voltage Vds
12V
On Resistance Rds(on)
5.5mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
600mV
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.0055Ohm
Drain-source On-volt
12V
Gate-source Voltage (max)
±8V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4866DY-T1-E3
Manufacturer:
VISHAY
Quantity:
15 000
Part Number:
SI4866DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 71192
11-Sep-06
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
e
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
D
DIM
A
A
B
C
D
E
H
S
e
h
L
q
1
B
A
1
A
1.35
0.10
0.35
0.19
4.80
3.80
5.80
0.25
0.50
0.44
Min
0°
MILLIMETERS
0.25 mm (Gage Plane)
1.27 BSC
8
1
7
2
Max
1.75
0.20
0.51
0.25
5.00
4.00
6.20
0.50
0.93
0.64
8°
6
3
L
5
4
E
S
h x 45
0.0075
0.053
0.004
0.014
0.189
0.150
0.228
0.010
0.020
0.018
Min
H
0°
0.050 BSC
INCHES
Package Information
C
0.069
0.008
0.020
0.010
0.196
0.157
0.244
0.020
0.037
0.026
Max
8°
q
Vishay Siliconix
All Leads
0.101 mm
0.004"
www.vishay.com
1