SI4866DY-T1-E3 Vishay, SI4866DY-T1-E3 Datasheet - Page 7
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SI4866DY-T1-E3
Manufacturer Part Number
SI4866DY-T1-E3
Description
MOSFET Power 12 Volt 11 Amp 3.0W
Manufacturer
Vishay
Type
Power MOSFETr
Specifications of SI4866DY-T1-E3
Transistor Polarity
N-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0055 Ohm @ 4.5 V
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
11 A
Power Dissipation
1600 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SO-8
Continuous Drain Current Id
17A
Drain Source Voltage Vds
12V
On Resistance Rds(on)
5.5mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
600mV
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.0055Ohm
Drain-source On-volt
12V
Gate-source Voltage (max)
±8V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4866DY-T1-E3
Manufacturer:
VISHAY
Quantity:
15 000
Part Number:
SI4866DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
www.vishay.com
22
Return to Index
Return to Index
(0.559)
0.022
Recommended Minimum Pads
Dimensions in Inches/(mm)
(4.369)
0.172
(1.270)
(0.711)
0.050
0.028
Document Number: 72606
Revision: 21-Jan-08