SI3812DV-T1-GE3 Vishay, SI3812DV-T1-GE3 Datasheet

MOSFET Small Signal 20V 2.4A 1.15W 125mohm @ 4.5V

SI3812DV-T1-GE3

Manufacturer Part Number
SI3812DV-T1-GE3
Description
MOSFET Small Signal 20V 2.4A 1.15W 125mohm @ 4.5V
Manufacturer
Vishay
Datasheet

Specifications of SI3812DV-T1-GE3

Transistor Polarity
N Channel + Schottky Diode
Continuous Drain Current Id
2.4A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
125mohm
Rds(on) Test Voltage Vgs
4.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3812DV-T1-GE3
Manufacturer:
AVX
Quantity:
43 000
Note:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 71069
S11-0651-Rev. G, 11-Apr-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Ordering Information: Si3812DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (T
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (Schottky)
Operating Junction and Storage Temperature Range
MOSFET PRODUCT SUMMARY
SCHOTTKY PRODUCT SUMMARY
V
V
DS
KA
20
20
(V)
(V)
3 mm
N-Channel 20 V (D-S) MOSFET with Schottky Diode
G
A
S
Diode Forward Voltage
0.125 at V
0.200 at V
0.48 V at 0.5 A
1
2
3
R
Top View
TSOP-6
2.85 mm
DS(on)
J
V
F
= 150 °C) (MOSFET)
GS
GS
(V)
()
= 4.5 V
= 2.5 V
6
5
4
a
a
K
N/C
D
This document is subject to change without notice.
a
A
I
= 25 °C, unless otherwise noted)
I
D
F
2.4
1.8
0.5
T
T
T
T
T
T
(A)
(A)
a
A
A
A
A
A
A
= 25 °C
= 85 °C
= 25 °C
= 85 °C
= 25 °C
= 85 °C
Symbol
T
FEATURES
• Halogen-free According to IEC 61249-2-21
• LITTLE FOOT
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
J
V
V
V
I
I
P
, T
DM
I
I
I
FM
DS
GS
KA
D
S
F
D
Definition
stg
g
Tested
G
1.05
1.15
0.59
0.52
5 s
2.4
1.7
0.5
1.0
®
8
N-Channel MOSFET
Plus
- 55 to 150
± 12
D
S
20
20
8
Steady State
Vishay Siliconix
0.75
0.83
0.53
0.76
0.48
2.0
1.4
0.5
8
www.vishay.com/doc?91000
Si3812DV
K
A
www.vishay.com
Unit
°C
W
V
V
A
1

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SI3812DV-T1-GE3 Summary of contents

Page 1

... 2.85 mm Ordering Information: Si3812DV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (T = 150 °C) (MOSFET) J Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction) Average Foward Current (Schottky) ...

Page 2

... Si3812DV Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a Junction-to-Ambient Junction to Foot (MOSFET Drain, Schottky Cathode) Note: a. Surface mounted on 1" x 1" FR4 board. MOSFET AND SCHOTTKY SPECIFICATIONS (T Parameter Symbol Static V Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current (MOSFET and Schottky) ...

Page 3

... 1.8 1.6 1.4 1.2 1.0 0.8 0.6 2.0 2.5 This document is subject to change without notice. Si3812DV Vishay Siliconix ° °C 125 °C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss ...

Page 4

... Si3812DV Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted 150 ° 0.1 0 0.3 0.6 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0 250 µA D 0.2 0.0 - 0.2 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0 ...

Page 5

... Normalized Thermal Transient Impedance, Junction-to-Foot 5 1 0.1 100 125 150 150 120 Reverse Voltage (V) KA Capacitance This document is subject to change without notice. Si3812DV Vishay Siliconix 150 ° ° 0.2 0.4 0.6 0 Forward Voltage Drop (V) F Forward Voltage Drop 16 20 www.vishay.com www.vishay.com/doc?91000 10 1 ...

Page 6

... Si3812DV Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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