SI3812DV Vishay Siliconix, SI3812DV Datasheet
SI3812DV
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SI3812DV Summary of contents
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... 85_C 25_C 85_C 25_C 85_C stg Si3812DV Vishay Siliconix sec Steady State 20 20 "12 "12 "2.0 "2.4 "1.7 "1.4 "8 1.05 0.75 0.5 0 1.15 0.83 0.59 0.53 1.0 0.76 0.52 0.48 –55 to 150 www.vishay.com Unit V ...
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... Si3812DV Vishay Siliconix Parameter a Junction-to-Ambient a Junction-to-Ambient Junction-to-Foot (MOSFET Drain, Schottky Kathode) Notes a. Surface Mounted on 1” x1” FR4 Board. Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current (MOSFET + Schottky) ...
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... 2 3.6 2.7 1.8 0.9 0.0 0.0 0.5 1.0 1.5 Q – Total Gate Charge (nC) g Document Number: 71069 S-03510—Rev. D, 16-Apr- 4 2.0 2.5 Si3812DV Vishay Siliconix Transfer Characteristics –55_C C 8 25_C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V – Gate-to-Source Voltage (V) GS Capacitance 300 250 C iss 200 150 ...
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... Si3812DV Vishay Siliconix Source-Drain Diode Forward Voltage 150_C 0.1 0.00 0.3 0.6 0.9 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.4 = 250 0.2 –0.0 –0.2 –0.4 –0.6 –50 – – Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 – ...
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... Normalized Thermal Transient Impedance, Junction-to-Foot –3 –2 10 Square Wave Pulse Duration (sec) _ 100 125 150 Capacitance 150 120 – Reverse Voltage (V KA Si3812DV Vishay Siliconix – Forward Voltage Drop 150_C 25_C J 0.1 0 0.2 0.4 0.6 V – Forward Voltage Drop ( ...
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... Si3812DV Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – www.vishay.com 6 _ –2 – Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot – ...