SI3812DV Vishay Siliconix, SI3812DV Datasheet - Page 4

• Manufacturer Part Number: SI3812DV
• Description: N-Channel MOSFET
• Manufacturer: Vishay Siliconix

Si3812DV
Vishay Siliconix
www.vishay.com
4
–0.0
–0.2
–0.4
–0.6
0.1
0.4
0.2
10
0.01
1
0.1
0.00
–50
2
1
10
–4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
–25
Source-Drain Diode Forward Voltage
V
T
0.3
J
SD
= 150_C
0
– Source-to-Drain Voltage (V)
T
Threshold Voltage
I
D
J
10
– Temperature (_C)
= 250 mA
25
0.6
–3
Single Pulse
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.9
T
75
J
= 25_C
10
100
–2
1.2
_
125
Square Wave Pulse Duration (sec)
1.5
150
10
–1
1
0.40
0.32
0.24
0.16
0.08
0.00
8
6
4
2
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
I
D
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
1
V
Notes:
= 1 A
P
GS
DM
JM
0.1
– Gate-to-Source Voltage (V)
– T
A
t
1
= P
2
Time (sec)
t
2
DM
Z
thJA
I
thJA
D
100
= 2.4 A
t
t
(t)
1
2
S-03510—Rev. D, 16-Apr-01
= 130_C/W
1
3
Document Number: 71069
600
4
10
5
30