SI3812DV-T1-GE3 Vishay, SI3812DV-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SI3812DV-T1-GE3
• Description: MOSFET Small Signal 20V 2.4A 1.15W 125mohm @ 4.5V
• Manufacturer: Vishay

Specifications of SI3812DV-T1-GE3

• Transistor Polarity: N Channel + Schottky Diode
• Continuous Drain Current Id: 2.4A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 125mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Si3812DV
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71069.
www.vishay.com
6
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
0.05
Duty Cycle = 0.5
0.02
0.2
0.1
-4
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
Single Pulse
Single Pulse
10
-3
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
This document is subject to change without notice.
10
-2
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
1
10
-1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
P
DM
JM
- T
A
t
1
= P
1
t
S11-0651-Rev. G, 11-Apr-11
2
DM
Document Number: 71069
Z
www.vishay.com/doc?91000
thJA
thJA
100
t
t
(t)
1
2
= 140 °C/W
600
10