DS90CR483VJD National Semiconductor, DS90CR483VJD Datasheet - Page 3

IC, LVDS CHANNEL LINK SER/DES, TQFP-100

DS90CR483VJD

Manufacturer Part Number
DS90CR483VJD
Description
IC, LVDS CHANNEL LINK SER/DES, TQFP-100
Manufacturer
National Semiconductor
Datasheet

Specifications of DS90CR483VJD

Supply Current
280mA
Supply Voltage Range
3V To 3.6V
Driver Case Style
TQFP
No. Of Pins
100
Operating Temperature Range
-10°C To +70°C
Device Type
Clock
Termination Type
SMD
Filter Terminals
SMD
Rohs Compliant
No
Data Rate Max
5380Mbps
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Manufacturer
Quantity
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Part Number:
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Part Number:
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CMOS/TTL DC SPECIFICATIONS
V
V
V
V
V
I
I
IN
OS
IH
IL
OH
OL
CL
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified.
Symbol
Supply Voltage (V
CMOS/TTL Input Voltage
LVCMOS/TTL Output
Voltage
LVDS Receiver Input
Voltage
LVDS Driver Output
Voltage
LVDS Output Short
Circuit Duration
Junction Temperature
Storage Temperature
Lead Temperature
(Soldering, 4 sec.)
Maximum Package Power Dissipation Capacity
25˚C
100L TQFP
100 TQFP Package:
DS90CR483VJD
High Level Input
Voltage
Low Level Input
Voltage
High Level Output
Voltage
Low Level Output
Voltage
Input Clamp Voltage
Input Current
Output Short Circuit
Current
Parameter
CC
)
−0.3V to (V
I
I
I
I
V
V
V
OH
OH
OL
CL
−65˚C to +150˚C
IN
IN
OUT
−0.3V to +5.5V
−0.3V to +3.6V
−0.3V to +3.6V
= −18 mA
= 2 mA
= −0.4 mA
= −2mA
= 0.4V, 2.5V or V
= GND
−0.3V to +4V
= 0V
Continuous
CC
(Note 1)
+ 0.3V)
+150˚C
+260˚C
@
2.3W
Conditions
CC
3
Recommended Operating
Conditions
Supply Voltage (V
Operating Free Air
Receiver Input Range
Supply Noise Voltage
Input Clock (TX)
Package Derating:
ESD Rating:
Temperature (T
DS90CR484VJD
DS90CR483VJD
DS90CR484VJD
DS90CR483
(HBM, 1.5kΩ, 100pF)
(EIAJ, 0Ω, 200pF)
DS90CR484
(HBM, 1.5kΩ, 100pF)
(EIAJ, 0Ω, 200pF)
A)
CC
)
GND
Min
−15
2.0
2.7
2.7
18.1mW/˚C above +25˚C
18.1mW/˚C above +25˚C
Min Nom Max
−10
3.0
33
0
−0.79
2.85
+1.8
Typ
3.3
0.1
0
+25
3.3
−120
Max
−1.5
+15
+70
100
112
0.8
0.3
3.6
2.4
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300 V
200 V
2.3W
6 kV
2 kV
mV
Units
MHz
˚C
V
V
Units
p-p
mA
µA
µA
V
V
V
V
V
V

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