83203 SENSONOR TECHNOLOGIES AS, 83203 Datasheet - Page 4

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83203

Manufacturer Part Number
83203
Description
IC, SENSOR, GYRO, SAR10, 16SOIC
Manufacturer
SENSONOR TECHNOLOGIES AS
Datasheet

Specifications of 83203

Sensor Case Style
SOIC
No. Of Pins
16
Supply Voltage Range
4.45V To 5.5V
Operating Temperature Range
-40°C To +90°C
Ic Generic Number
SAR10H
Interface
SPI
Sensitivity
0.03°/
Interface Type
SPI
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
1
1.1
1.2
TS1162 rev. 1
The SAR10(H) consists of a ButterflyGyro™ MEMS die and a BiCMOS ASIC
housed in a miniature SOIC plastic package. The sensitive axis is parallel to the
mounting plane. The function is based on the excitation of a reference motion in
the butterfly structure. An angular rotation of the device will generate Coriolis
forces, whose frequency equals that of the reference motion and whose resulting
vibration amplitude is a measure for the angular rotation. By utilizing Sensonor's
unique patented sealed cavity technology, the vibrating masses are contained
within the low-pressure hermetic environment needed for creating low dynamic
damping and high Q factors, without any degradation over the lifetime of the
device. The gyro die is built as a triple stack consisting of a bottom glass die with
metalized patterns defining excitation and detection electrodes, a middle micro
machined mono crystalline silicon die with the oscillating masses, which also
represent a common opposite electrode, and a third top cap glass die. A time
multiplexed, switched interface is used between the gyro die and the ASIC. This makes it possible to improve the
symmetry by using the same electrodes for drive interface and sense interface. By the symmetric mechanical
design and by connecting the electrodes cross-wise symmetric, the "butterfly” masses are operating in a balanced
anti-phase movement. The balanced operation of both the excitation mode and the detection mode makes
SAR10(H) almost insensitive to environmental vibrations, limiting effects causing bias drift as well as improving the
Q-factors. A fine-tuning of the oscillation frequencies to allow for force-feedback operation is done during final test
for each sensor by applying and programming an electrostatic bias to reduce mechanical stiffness and thereby
Figure 1.1 SAR10 Block diagram
Product Description
o High reliability and robustness over long
o Low vibration sensitivity
o High overload and shock capability (5000 g)
o Sensitive axis parallel to mounting plane
o Butterfly balanced design for high
o Closed-loop force feedback operation with
o Ideal mono crystalline Si material
o Wafer level sealing with controlled Q-factor
Features
Overview
lifetime
mechanical common mode rejection
electrostatic frequency tuning
Driver
Driver
LNA
LNA
DATASHEET
Excitation
Detection
control
control
clock generator
Demodulator
control and
shifter 90°
Power up
Phase
- 4 -
References,
decimation
bias and
OTPROM
ADC and
PTAT
SAR10 GYRO SENSOR SERIES
Gain, offset and
compensation
temperature
SPI serial
4th order
interface
LPF
IIR
o Low power
o Single supply +5 VDC
o Fully digital with SPI communication and on
o Digitally controlled sample rate up to 2000
o Bandwidth defined by built in 4th order digital
o Intrinsic continuous diagnostic monitoring
o No external components required
chip OTP calibration
SPS
LP filter
LOAD
SCLK
MOSI
MISO
calibrate detection mode
frequency. Fixed algorithms use
individually determined
calibration coefficients stored in
OTPROM poly fuse cells.
Readings from the internal
temperature sensor are used for
accurate angular rate
definitions. An SPI interface
enables communication
between application and
SAR10(H). The angular rate
data output is a 12-bit 2’s
complement format. A number
of functions are available
through the digital SPI interface.
Figure 1.2 SAR10 Element
structure
SAR10, SAR10H

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