S29GL01GP11FFIR20 Spansion Inc., S29GL01GP11FFIR20 Datasheet - Page 3
![Flash - NOR IC](/photos/19/5/190515/4386991_sml.jpg)
S29GL01GP11FFIR20
Manufacturer Part Number
S29GL01GP11FFIR20
Description
Flash - NOR IC
Manufacturer
Spansion Inc.
Datasheet
1.S29GL01GP11FFIR20.pdf
(80 pages)
Specifications of S29GL01GP11FFIR20
Memory Size
1000Mbit
Memory Configuration
128K X 16
Ic Interface Type
CFI, Parallel
Access Time
110ns
Supply Voltage Range
3V To 3.6V
Memory Case Style
TSOP
No. Of Pins
64
Cell Type
NOR
Density
1Gb
Access Time (max)
110ns
Interface Type
Parallel
Boot Type
Not Required
Address Bus
27/26Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
Fortified BGA
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
3V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
128M/64M
Supply Current
110mA
Mounting
Surface Mount
Pin Count
64
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
S29GL01GP11FFIR20
Manufacturer:
SPANSION
Quantity:
1 000
General Description
Distinctive Characteristics
This document states the current technical specifications regarding the Spansion product(s) described herein. Spansion Inc. deems the products to have been in sufficient pro-
duction volume such that subsequent versions of this document are not expected to change. However, typographical or specification corrections, or modifications to the valid com-
binations offered may occur.
The Spansion S29GL01G/512/256/128P are Mirrorbit
offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer
that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time
than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher
density, better performance and lower power consumption.
Single 3V read/program/erase (2.7-3.6 V)
Enhanced VersatileI/O™ control
90 nm MirrorBit process technology
8-word/16-byte page read buffer
32-word/64-byte write buffer reduces overall programming
Secured Silicon Sector region
Uniform 64 Kword/128 Kbyte Sector Architecture
100,000 erase cycles per sector typical
20-year data retention typical
S29GL-P MirrorBit
S29GL01GP, S29GL512P, S29GL256P, S29GL128P
1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit
3.0 Volt-only Page Mode Flash Memory featuring
90 nm MirrorBit Process Technology
Data Sheet
– All input levels (address, control, and DQ input levels) and outputs
time for multiple-word updates
– 128-word/256-byte sector for permanent, secure identification
– Can be programmed and locked at the factory or by the customer
– S29GL01GP: One thousand twenty-four sectors
– S29GL512P: Five hundred twelve sectors
– S29GL256P: Two hundred fifty-six sectors
– S29GL128P: One hundred twenty-eight sectors
are determined by voltage on V
through an 8-word/16-byte random Electronic Serial Number
Publication Number S29GL-P_00
IO
input. V
IO
range is 1.65 to V
®
Flash Family
Revision A
®
Flash products fabricated on 90 nm process technology. These devices
CC
Amendment 13
Offered Packages
Suspend and Resume commands for Program and Erase
Write operation status bits indicate program and erase
Unlock Bypass Program command to reduce programming
Support for CFI (Common Flash Interface)
Persistent and Password methods of Advanced Sector
WP#/ACC input
Hardware reset input (RESET#) resets device
Ready/Busy# output (RY/BY#) detects program or erase
– 56-pin TSOP
– 64-ball Fortified BGA
operations
operation completion
time
Protection
– Accelerates programming time (when V
– Protects first or last sector regardless of sector protection settings
cycle completion
throughput during system production
Issue Date November 17, 2010
HH
is applied) for greater