S29GL01GP11FFIR20 Spansion Inc., S29GL01GP11FFIR20 Datasheet - Page 4

• Manufacturer Part Number: S29GL01GP11FFIR20
• Description: Flash - NOR IC
• Manufacturer: Spansion Inc.

Specifications of S29GL01GP11FFIR20

• Memory Size: 1000Mbit
• Memory Configuration: 128K X 16
• Ic Interface Type: CFI, Parallel
• Access Time: 110ns
• Supply Voltage Range: 3V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 64
• Cell Type: NOR
• Density: 1Gb
• Access Time (max): 110ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 27/26Bit
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: Fortified BGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 3V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 128M/64M
• Supply Current: 110mA
• Mounting: Surface Mount
• Pin Count: 64
• Lead Free Status / Rohs Status: Compliant

Performance Characteristics
4
Notes
1. Access times are dependent on V
2. Contact a sales representative for availability.
128 & 256 Mb
See
Regulated V
Full V
VersatileIO V
Density
512 Mb
1 Gb
Ordering Information
CC
: V
CC
CC
IO
= V
: V
: V
Voltage Range
IO
CC
IO
Regulated V
VersatileIO V
Regulated V
VersatileIO V
Regulated V
VersatileIO V
= 2.7–3.6 V.
= 1.65–V
= 3.0–3.6 V.
Full V
Full V
Full V
page for further details.
Random Access Read (f = 5 MHz)
8-Word Page Read (f = 10 MHz)
Program/Erase
Standby
Single Word Programming
Effective Write Buffer Programming (V
Effective Write Buffer Programming (V
Sector Erase Time (64 Kword Sector)
CC
CC
CC
CC
CC
CC
CC
IO
IO
IO
, V
(1)
CC
S29GL-P MirrorBit
CC
and V
= 2.7–3.6 V.
Random Access
IO
Time (t
Program & Erase Times (typical values)
operating ranges.
Current Consumption (typical values)
100/110
Maximum Read Access Times (ns)
110
100
110
120
110
120
130
90
ACC
D a t a
)
®
Flash Family
Page Access Time
CC
HH
S h e e t
) Per Word
) Per Word
(t
PACC
25
25
25
)
S29GL-P_00_A13 November 17, 2010
CE# Access Time
13.5 µs
100/110
30 mA
50 mA
60 µs
15 µs
1 mA
0.5 s
1 µA
(t
110
100
110
120
110
120
130
90
CE
)
OE# Access Time
(t
25
25
25
OE
)